Study on interface properties of GaAs/AO/Al structures using the Thermally Stimulated Current (TSC) method

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dc.contributor.authorÖztürk, Z.Z.
dc.contributor.authorEbeoğlu, M.A.
dc.date.accessioned2024-04-24T15:59:32Z
dc.date.available2024-04-24T15:59:32Z
dc.date.issued1993
dc.departmentDicle Üniversitesi, Fen Edebiyat Fakültesi, Fizik Bölümüen_US
dc.description.abstractInterface properties of GaAs/anodic oxide (AO)/Al structures with various anodic oxide films which are grown by using different electrolytes under constant current conditions are studied. The C-U, I-U, and thermally stimulated current measurements for these devices are carried out at various temperatures. Trap energy levels which are determined from TSC measurements indicate that there are As(Ga) antisite and probably As interstitial-type defects at the interface depending on the preparation techniques.en_US
dc.identifier.citationÖztürk, Z.Z. ve Ebeoğlu, M.A. (1993). Study on interface properties of GaAs/AO/Al structures using the Thermally Stimulated Current (TSC) method. Physica Status Solidi A-Applied Research, 138(2), 631–638
dc.identifier.doi10.1002/pssa.2211380232
dc.identifier.endpage638en_US
dc.identifier.issn0031-8965
dc.identifier.issue2en_US
dc.identifier.scopus2-s2.0-85024791103
dc.identifier.scopusqualityN/A
dc.identifier.startpage631en_US
dc.identifier.urihttps://doi.org/10.1002/pssa.2211380232
dc.identifier.urihttps://hdl.handle.net/11468/14126
dc.identifier.urihttps://onlinelibrary.wiley.com/doi/epdf/10.1002/pssa.2211380232
dc.identifier.volume138en_US
dc.identifier.wosWOS:A1993LW77700031
dc.identifier.wosqualityQ3
dc.indekslendigikaynakWeb of Science
dc.indekslendigikaynakScopus
dc.institutionauthorEbeoğlu, M.A.
dc.language.isoenen_US
dc.publisherAkademie Verlag Gmbhen_US
dc.relation.ispartofPhysica Status Solidi A-Applied Research
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanıen_US
dc.rightsinfo:eu-repo/semantics/closedAccessen_US
dc.subject[No Keyword]en_US
dc.titleStudy on interface properties of GaAs/AO/Al structures using the Thermally Stimulated Current (TSC) methoden_US
dc.titleStudy on interface properties of GaAs/AO/Al structures using the Thermally Stimulated Current (TSC) method
dc.typeArticleen_US

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