Study on interface properties of GaAs/AO/Al structures using the Thermally Stimulated Current (TSC) method
Yükleniyor...
Tarih
1993
Yazarlar
Dergi Başlığı
Dergi ISSN
Cilt Başlığı
Yayıncı
Akademie Verlag Gmbh
Erişim Hakkı
info:eu-repo/semantics/closedAccess
Özet
Interface properties of GaAs/anodic oxide (AO)/Al structures with various anodic oxide films which are grown by using different electrolytes under constant current conditions are studied. The C-U, I-U, and thermally stimulated current measurements for these devices are carried out at various temperatures. Trap energy levels which are determined from TSC measurements indicate that there are As(Ga) antisite and probably As interstitial-type defects at the interface depending on the preparation techniques.
Açıklama
Anahtar Kelimeler
[No Keyword]
Kaynak
Physica Status Solidi A-Applied Research
WoS Q Değeri
Q3
Scopus Q Değeri
N/A
Cilt
138
Sayı
2
Künye
Öztürk, Z.Z. ve Ebeoğlu, M.A. (1993). Study on interface properties of GaAs/AO/Al structures using the Thermally Stimulated Current (TSC) method. Physica Status Solidi A-Applied Research, 138(2), 631–638
