Electrical and photoelectrical characterization of Au/n-Si diode with sputtered ZrO2 interlayer

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dc.authorid0000-0001-8754-1720en_US
dc.authorid0000-0001-9760-7594en_US
dc.contributor.authorObaid, Masoud Giyathaddin
dc.contributor.authorOcak, Yusuf Selim
dc.contributor.authorAlbiss, Borhan Aldeen
dc.contributor.authorBenhaliliba, Mostefa
dc.date.accessioned2023-11-03T06:30:05Z
dc.date.available2023-11-03T06:30:05Z
dc.date.issued2023en_US
dc.departmentDicle Üniversitesi, Fen Bilimleri Enstitüsü, Fizik Ana Bilim Dalıen_US
dc.description.abstractZrO2 thin films were deposited on n-Si and quartz substrates by a reactive sputtering technique. The morphological and optical characterization of a sputtered ZrO2 thin film revealed a highly smooth surface with 1.5 nm roughness and optical band gap value of 5.7 eV. An Au/ZrO2/n-Si metal–insulator-semiconductor (MIS) structure was obtained by evaporation of the Au on ZrO2/n-Si structure. The electrical properties analyzed by current–voltage (I-V) measurements in the dark showed that the device had 5. 094 ideality factor, 0.808 eV barrier height, and 50 Ω series resistance values. The C-V measurements showed that the device could not follow the AC signals at higher frequencies owing to the interface states, and the barrier height value calculated using C-V data (0.916 eV) is higher than the one obtained from the I-V plot. The photoelectrical parameters were determined by I-V measurements at various light intensities. The findings proved that the photoelectrical parameters of the MIS device had a photosensing behavior.en_US
dc.identifier.citationObaid, M. G., Ocak, Y. S., Albiss, B. A. ve Benhaliliba, M. (2023). Electrical and photoelectrical characterization of Au/n-Si diode with sputtered ZrO2 interlayer. Journal of Materials Science: Materials in Electronics, 34(25), 1-10.en_US
dc.identifier.doi10.1007/s10854-023-11160-9
dc.identifier.endpage10en_US
dc.identifier.issn0957-4522
dc.identifier.issue25en_US
dc.identifier.scopus2-s2.0-85169936760
dc.identifier.scopusqualityQ2
dc.identifier.startpage1en_US
dc.identifier.urihttps://link.springer.com/article/10.1007/s10854-023-11160-9
dc.identifier.urihttps://hdl.handle.net/11468/13036
dc.identifier.volume34en_US
dc.identifier.wosWOS:001062766700003
dc.identifier.wosqualityN/A
dc.indekslendigikaynakWeb of Science
dc.indekslendigikaynakScopus
dc.institutionauthorObaid, Masoud Giyathaddin
dc.institutionauthorOcak, Yusuf Selim
dc.language.isoenen_US
dc.publisherSpringeren_US
dc.relation.ispartofJournal of Materials Science: Materials in Electronics
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - İdari Personel ve Öğrencien_US
dc.rightsinfo:eu-repo/semantics/closedAccessen_US
dc.subjectElectric resistanceen_US
dc.subjectEnergy gapen_US
dc.subjectInterface statesen_US
dc.subjectReactive sputteringen_US
dc.subjectZirconiaen_US
dc.titleElectrical and photoelectrical characterization of Au/n-Si diode with sputtered ZrO2 interlayeren_US
dc.titleElectrical and photoelectrical characterization of Au/n-Si diode with sputtered ZrO2 interlayer
dc.typeArticleen_US

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