Electrical and photoelectrical characterization of Au/n-Si diode with sputtered ZrO2 interlayer
Yükleniyor...
Tarih
2023
Dergi Başlığı
Dergi ISSN
Cilt Başlığı
Yayıncı
Springer
Erişim Hakkı
info:eu-repo/semantics/closedAccess
Özet
ZrO2 thin films were deposited on n-Si and quartz substrates by a reactive sputtering technique. The morphological and optical characterization of a sputtered ZrO2 thin film revealed a highly smooth surface with 1.5 nm roughness and optical band gap value of 5.7 eV. An Au/ZrO2/n-Si metal–insulator-semiconductor (MIS) structure was obtained by evaporation of the Au on ZrO2/n-Si structure. The electrical properties analyzed by current–voltage (I-V) measurements in the dark showed that the device had 5. 094 ideality factor, 0.808 eV barrier height, and 50 Ω series resistance values. The C-V measurements showed that the device could not follow the AC signals at higher frequencies owing to the interface states, and the barrier height value calculated using C-V data (0.916 eV) is higher than the one obtained from the I-V plot. The photoelectrical parameters were determined by I-V measurements at various light intensities. The findings proved that the photoelectrical parameters of the MIS device had a photosensing behavior.
Açıklama
Anahtar Kelimeler
Electric resistance, Energy gap, Interface states, Reactive sputtering, Zirconia
Kaynak
Journal of Materials Science: Materials in Electronics
WoS Q Değeri
N/A
Scopus Q Değeri
Q2
Cilt
34
Sayı
25
Künye
Obaid, M. G., Ocak, Y. S., Albiss, B. A. ve Benhaliliba, M. (2023). Electrical and photoelectrical characterization of Au/n-Si diode with sputtered ZrO2 interlayer. Journal of Materials Science: Materials in Electronics, 34(25), 1-10.
