Electrical and photoelectrical characterization of a TTF/p-InP organic–inorganic heterojunction
dc.authorid | TR1393 | en_US |
dc.authorid | TR103523 | en_US |
dc.authorid | TR105209 | en_US |
dc.authorid | 0000-0003-2827-3097 | en_US |
dc.contributor.author | Kilicoglu, Tahsin | |
dc.contributor.author | Tombak, Ahmet | |
dc.contributor.author | Ocak, Yusuf Selim | |
dc.contributor.author | Aydemir, Murat | |
dc.date.accessioned | 2014-11-17T14:08:44Z | |
dc.date.available | 2014-11-17T14:08:44Z | |
dc.date.issued | 2014 | |
dc.department | 0-Belirlenecek | en_US |
dc.description.abstract | Tetrathiafulvalene (TTF) with C6H4S4 molecular formula was used in the fabrication of organic inorganic (OI) heterojunction. The Al/TTF/p-InP/Au-Zn structure was fabricated by forming a thin TTF organic semiconductor on p-InP inorganic semiconductor and evaporating of Al metal on the film. The characteristic parameters of the device were determined by using current-voltage (I-V) and capacitance voltage (C-V) measurements. Interface state density distribution was calculated from the I-V characteristics. The I-V characteristics of the device were also examined at 100 mW/cm(2) illumination intensity by the help of a solar simulator with AM1.5 global filter. (C) 2014 Elsevier B.V. All rights reserved. | en_US |
dc.identifier.citation | Kilicoglu, Tahsin, Tombak, Ahmet, Ocak, Yusuf Selim,Aydemir, Murat "Electrical and photoelectrical characterization of a TTF/p-InP organic–inorganic heterojunction"Microelectronic Engineering 129 (2014) 91–95.. | en_US |
dc.identifier.doi | 10.1016/j.mee.2014.07.025 | |
dc.identifier.scopus | 2-s2.0-84926278965 | |
dc.identifier.scopusquality | N/A | |
dc.identifier.uri | https://hdl.handle.net/11468/444 | |
dc.identifier.uri | http://www.sciencedirect.com/science/article/pii/S016793171400330X# | |
dc.identifier.wos | WOS:000342885400017 | |
dc.identifier.wosquality | Q3 | |
dc.indekslendigikaynak | Web of Science | |
dc.indekslendigikaynak | Scopus | |
dc.institutionauthor | 0-Belirlenecek | |
dc.language.iso | en | en_US |
dc.publisher | Microelectronic Engineering | en_US |
dc.relation.publicationcategory | 0-Belirlenecek | en_US |
dc.rights | info:eu-repo/semantics/closedAccess | en_US |
dc.subject | Organic-inorganic heterojunction | en_US |
dc.subject | Tetrathiafulvalene | en_US |
dc.subject | Barrier height | en_US |
dc.subject | Schottky-barrier diode | en_US |
dc.subject | Thin-flim transistors | en_US |
dc.subject | Solar-cell | en_US |
dc.subject | Voltage characteristic | en_US |
dc.subject | Photovoltaic properties | en_US |
dc.subject | Semiconductor contact | en_US |
dc.subject | Electronic-Propertis | en_US |
dc.subject | Series resistance | en_US |
dc.subject | N-Sı | en_US |
dc.subject | Fabrication | en_US |
dc.title | Electrical and photoelectrical characterization of a TTF/p-InP organic–inorganic heterojunction | en_US |
dc.title | Electrical and photoelectrical characterization of a TTF/p-InP organic–inorganic heterojunction | |
dc.type | Article | en_US |
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