Electrical and photoelectrical characterization of a TTF/p-InP organic–inorganic heterojunction
Yükleniyor...
Tarih
2014
Dergi Başlığı
Dergi ISSN
Cilt Başlığı
Yayıncı
Microelectronic Engineering
Erişim Hakkı
info:eu-repo/semantics/closedAccess
Özet
Tetrathiafulvalene (TTF) with C6H4S4 molecular formula was used in the fabrication of organic inorganic (OI) heterojunction. The Al/TTF/p-InP/Au-Zn structure was fabricated by forming a thin TTF organic semiconductor on p-InP inorganic semiconductor and evaporating of Al metal on the film. The characteristic parameters of the device were determined by using current-voltage (I-V) and capacitance voltage (C-V) measurements. Interface state density distribution was calculated from the I-V characteristics. The I-V characteristics of the device were also examined at 100 mW/cm(2) illumination intensity by the help of a solar simulator with AM1.5 global filter. (C) 2014 Elsevier B.V. All rights reserved.
Açıklama
Anahtar Kelimeler
Organic-inorganic heterojunction, Tetrathiafulvalene, Barrier height, Schottky-barrier diode, Thin-flim transistors, Solar-cell, Voltage characteristic, Photovoltaic properties, Semiconductor contact, Electronic-Propertis, Series resistance, N-Sı, Fabrication
Kaynak
WoS Q Değeri
Q3
Scopus Q Değeri
N/A
Cilt
Sayı
Künye
Kilicoglu, Tahsin, Tombak, Ahmet, Ocak, Yusuf Selim,Aydemir, Murat "Electrical and photoelectrical characterization of a TTF/p-InP organic–inorganic heterojunction"Microelectronic Engineering 129 (2014) 91–95..
