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60Co ?-irradiation effects on electrical properties of a rectifying diode based on a novel macrocyclic Zn octaamide complex
(Elsevier, 2010) Ocak, Y. S.; Kilicoglu, T.; Topal, G.; Baskan, M. H.
C36H28N12O8ZnC12 center dot 9/2H(2)O, Zn-octaamide (ZnOA) macrocyclic compound was synthesized to be used in the fabrication of electronic and photoelectronic devices. The structure of new compound was identified by using H-1 NMR, C-13 NMR, IR, UV-vis and LC-MS spectroscopic methods. The Sn/ZnOA/n-Si/Au structure was engineered by forming a thin macrocyclic organic compound layer on n-Si inorganic substrate and then by evaporating Sn metal on the organic layer. It was seen that the device had a good rectifying behaviour and showed Schottky diode properties. The diode was irradiated under Co-60 gamma-source at room temperature. Characteristic parameters of the diode were determined from its currentvoltage (I-V) and capacitance voltage (C-V) measurements before and after irradiation. It was observed that gamma-irradiation had clear effects on I-V and C-V properties. Also, it was seen that the barrier height, the ideality factor and the series resistance values decreased after the applied radiation, while the saturation current value increased. (C) 2009 Elsevier B.V. All rights reserved.
AC Impedance Analysis of the Al/ZnO/p-Si/Al Schottky Diode: C-V Plots and Extraction of Parameters
(Sumy State Univ, Dept Marketing & Mia, 2015) Benhaliliba, M.; Ocak, Y. S.; Mokhtari, H.; Kilicoglu, T.
In this research, we report on the measurement of the capacitance-voltage (C-V) characteristics Al / ZnO / p-Si / Al Schottky diode at room temperature and in dark condition fabricated by spray pyrolysis process. C-V characteristics, within the range of frequencies 5 kHz-5 MHz, are investigated and microelectronic parameters are extracted. Donor density and diffusion potential vary with frequency from 15 to 28 1014 cm - 3, 0.21 to 0.45 V. Besides, the interface state density of Al /ZnO / pSi/Al Schottky is determined and found to be 1012 (eV.cm(2))(-1). Calculated at 1 MHz, the interfacial layer thickness and depletion layer width are of 760 angstrom and 0.28 m.
The Annealing Effects of ZnO Thin Films on Characteristic Parameters of Au/ZnO Schottky Contacts on n-Si
(Sumy State Univ, Dept Marketing & Mia, 2012) Akkilic, K.; Ocak, Y. S.; Kilicoglu, T.; Toprak, A.
200 nm ZnO thin films have been grown on n type Silicon substrates by DC sputtering technique. One of the thin films has been annealed at 300 degrees C for 45 minutes. The Au front contacts on ZnO thin films have been formed by evaporation of Au metal by means of shadow mask. It has been seen that the rectification ratio of Au/ZnO device obtained using annealed ZnO thin film is higher than the one obtained using unannealed ZnO thin film. The characteristic parameters of Au/ZnO junctions such as ideality factor, barrier height and series resistance obtained by current-voltage (I-V) measurements of the structures at room temperature and in dark have been compared with each others.
Calculation of current-voltage characteristics of a Cu (II) complex/n-Si/AuSb Schottky diode
(Elsevier, 2010) Akkilic, K.; Ocak, Y. S.; Kilicoglu, T.; Ilhan, S.; Temel, H.
In this Study, Cu (II) complex/n-Si structure has been fabricated by forming a thin organic Cu (11) complex film on n-Si wafer. It has been seen that the structure has clearly shown the rectifying behaviour and can be evaluated as a Schottky diode. The contact parameters of the diode such as the barrier height and the ideality factor have been calculated using several methods proposed by different authors from current-voltage (I-V) characteristics of the device. The calculated barrier height and ideality factor values from different methods have shown the consistency of the approaches. The obtained ideality factor which is greater than unity refers the deviation from ideal diode characteristics. This deviation can be attributed to the native interfacial layer in the organic/inorganic interface and the high series resistance of the diode. In addition, the energy distribution of the interface state density (N-ss) in the semiconductor band gap at Cu (II) complex/n-Si interface obtained from I-V characteristics range from 2.15 x 10(13) cm(-2) eV(-1) at (E-c - 0.66) eV to 5.56 x 10(12) cm(-2) eV(-1) at (E-c - 0.84) eV. (C) 2009 Elsevier B.V. All rights reserved.
The calculation of electronic parameters of an Ag/chitin/n-Si Schottky barrier diode
(Elsevier Science Sa, 2006) Akkilic, K.; Aydin, M. E.; Uzun, I.; Kilicoglu, T.
We have formed polymeric organic compound chitin film on n-Si substrate by adding a solution of polymeric compound chifin in N,N-dimethylacetamide and lithium chloride on top of an n-Si substrate and then evaporating solvent. It has been seen that the chitin/n-Si contact has demonstrated clearly rectifying behavior and the reverse curves exhibit a weak bias voltage dependence by the current-voltage (I-V) curves studied at room temperature. The barrier height and ideality factor values of 0.959 eV and 1.553, respectively, for this structure have been obtained from the forward bias I-V characteristics. Furthermore, the energy distribution of the interface state density located in the semiconductor band gap at the chitin/n-Si substrate in the energy range from (E-c-0.897) to (E-c-0.574) eV have been determined from the I-V characteristics. The interface state density, N-55, ranges from 5.965 x 10(12) cm(-2) eV(-1) in (E-c-0.897) eV to 1.706 x 10(13) cm(-2) eV(-1) in (E-c-0.574) eV and has an exponential rise with bias this energy range. (c) 2006 Elsevier B.V. All rights reserved.
The calculation of electronic parameters of an Al/Methyl red/p-si Schottky diode
(Amer Inst Physics, 2007) Kilicoglu, T.; Ocak, Yusuf S.
The Al/methyl red/p-Si Schottky barrier diode has been fabricated by adding a solution of the non-polymeric organic compound methyl red in chloroform on top of p-Si substrate, and then evaporating the solvent. The methyl red/p-Si contact shows rectifying behaviour and the reverse curve exhibits weak bias voltage dependence. Electronic parameters of Al/methyl red/p-Si Schottky barrier diode were calculated by using current-voltage (I-V) curve and interface state density distribution properties were obtained by using capacitance method. The interface state density has an exponential rise with bias from the mid-gap towards the top of the valance band.
The calculation of electronic parameters of an Au/?-carotene/n-Si Schottky barrier diode
(Elsevier, 2006) Aydin, M. E.; Kilicoglu, T.; Akkilic, K.; Hosgoren, H.
An Au/beta-carotene/n-Si Schottky barrier diode has been fabricated by adding a solution of the non-polymeric organic compound beta-carotene in chloroform on top of an n-Si substrate, and then evaporating the solvent. The beta-carotene/n-Si contact shows rectifying behaviour and the reverse curves exhibit a weak bias voltage dependence. The barrier height and ideality factor values of 0.80 eV and 1.32, respectively for this structure, have been obtained from the forward bias current-voltage (I-V) characteristics. The energy distribution of the interface state density located in the inorganic semiconductor band gap at the organic compound/inorganic semiconductor interface in the energy range (E-c-0.76) to (E-c-0.53) eV have been determined from the I-V characteristics. The interface state density N-ss ranges from 5.84 x 10(12) cm(-2) eV(-1) in (E-c-0.76) eV to 8.83 x 10(13) cm(-2) eV(-1) in (E-c-0.53)eV. The interface state density has an exponential rise with bias from the mid-gap towards the bottom of the conduction band. (c) 2006 Elsevier B.V. All rights reserved.
Current-voltage and capacitance-voltage characteristics of a Sn/Methylene Blue/p-Si Schottky diode
(Elsevier Science Sa, 2009) Ocak, Y. S.; Kulakci, M.; Kilicoglu, T.; Turan, R.; Akkilic, K.
Electrical and interfacial properties of Sn/Methylene Blue (MB)/p-Si Schottky diode have been determined by using current-voltage (I-V) and capacitance-voltage (C-V) measurements of the device at room temperature. Cheung functions and modified Norde functions have been used to obtain the electrical characteristics such as barrier height and series resistance of the diode. It has been seen that the MB layer modifies the effective barrier height of the structure because the layer creates the physical barrier between the metal and the semiconductor. Electrical properties of the device obtained from C-V characteristics have been compared with the ones obtained from its I-V characteristics. It has been seen that at sufficiently high frequencies, the charge at the interface cannot follow an ac signal. The interface state density of the diode has been also calculated. (C) 2009 Elsevier B.V. All rights reserved.
The current-voltage and capacitance-voltage characteristics of molecularly modified ?-carotene/n-type Si junction structure with fluorescein sodium salt
(Elsevier Science Sa, 2007) Aydin, M. E.; Yakuphanoglu, F.; Kilicoglu, T.
beta-Carotene-FSS organic semiconductor/n-type Si structure has been characterized by current-voltage and capacitance-voltage methods. A deviation in I-V characteristic of the diode is observed due to effect of series resistance and interfacial layer. Cheung's functions were used to calculate diode parameters. The ideality factor, series resistance and barrier height values of the diode are n = 1.77,R(s) = 10.32 (10.39) k Omega and 0.78 eV. The obtained ideality factor suggests that Au/beta-carotene-FSS/n-Si Schottky diode has a metal-SiO(2) oxide layer plus organic layer-semiconductor (MIOS) configuration. The capacitance-voltage characterizations of Au/beta-carotene-FSS/n-Si diode at different temperatures were performed. The capacitance of the diode changes with temperature. The barrier height and ideality factor obtained from C-V curves are 0.67 eV and 1.68. The interface density properties of the diode are analyzed and the shape of the density distribution of the interface states is in the range of E(c) -0.49 to -0.62 eV. It is evaluated that the FSS organic layer controls electrical charge transport properties of Au/beta-carotene/n-Si diode by excluding effects of the P-carotene and SiO(2) residual oxides on the hybrid diode. (c) 2007 Elsevier B.V. All rights reserved.
The determination of the interface state density distribution of the Al/methyl red/p-Si Schottky barrier diode by using a capacitance method
(Elsevier, 2007) Kilicoglu, T.; Aydin, M. E.; Ocak, Y. S.
Al/methyl red/p-Si Schottky barrier diodes (SBD) have been fabricated by adding a solution of the non-polymeric organic compound methyl red in chloroform on top of p-Si substrates, and then evaporating the solvent. The electronic and interface state density distribution properties were obtained from the current-voltage (I-P) and the capacitance-voltage (C-V) characteristics (high and low frequency) of Al/methyl red/p-Si SBD at room temperature. The energy distribution of the interface state density located in the inorganic semiconductor band gap at the organic compound/inorganic semiconductor interface in the energy range from (0.675-E-v) eV to (0.783-E-v) eV has been determined. In addition, the interface state density N-ss range from 6.12 x 10(13) cm(-2) eV(-1) in (0.675-E-v) eV to 4.31 x 10(12) cm(-2) eV(-1) in (0.783-E-v) eV. The interface state density has an exponential rise with bias from the mid-gap towards the top of the valence band. (c) 2006 Elsevier B.V. All rights reserved.
The effect of a novel organic compound chiral macrocyclic tetraamide-I interfacial layer on the calculation of electrical characteristics of an Al/tetraamide-I/p-Si contact
(Elsevier Science Sa, 2007) Kilicoglu, T.; Aydina, M. E.; Topal, G.; Ebeoglu, M. A.; Saygili, H.
The Al/tetraamide-I/p-Si Schottky barrier diode (SBD) has been prepared by adding a solution of a novel nonpolymeric organic compound chiral macrocylic tetraamide-I in chloroform on top of a p-Si substrate and then evaporating the solvent. It has been seen that the forward-bias current-voltage (I-V) characteristics of Al/tetraamide-I/p-Si SBD with a barrier height value of 0.75 eV and an ideality factor value of 1.77 showed rectifying behaviour. The energy distribution of the interface state density determined from I-V characteristics increases exponentially with bias from 5.81 x 10(12) cm(-2) eV(-1) at (0.59-E-v) eV to 1.02 x 10(13) cm(-2) eV(-1) at (0.40-E-v) eV. It has showed that space charge limited current (SCLC) and trap charge limited current (TCLC) are the dominant transport mechanisms at large forward-bias voltages. (C) 2007 Elsevier B.V. All rights reserved.
Effect of the binuclear Cu(II) complex interface layer on the calculation of electronic properties of Au/Cu(II) complex/n-Si organic-inorganic hybrid heterojunction
(Elsevier Science Sa, 2008) Akkilic, K.; Ocak, Y. S.; Ilhan, S.; Kilicoglu, T.
Electronic properties of organic-inorganic (01) hybrid heterojunction fabricated by forming a thin macrocyclic diamagnetic and binuclear Cu(II) complex [Cu-2(L)(ClO4)(2)][ClO4](2) (where L is C33H32N2O4) film on n-Si wafer have been studied. The Au/Cu(II) complex/n-Si contact has a rectifying behavior with the barrier height of 0.96 eV and the ideality factor of 2.96 determined from forward-bias current-voltage (I-V) characteristics at room temperature. The energy distribution of the interface state density (N-ss) in the semiconductor band gap at Cu(II) complex/n-Si interface obtained from I-V characteristics ranges from 1.62 x 10(13) cm(-1) eV(-1) at (E-c - 0.66)eV to 6.82 x 10(12) cm(-2) eV(-1) at (E-c - 0.9)eV. (C) 2008 Elsevier B.V. All rights reserved.
Electrical Characterization of Au/Quercetin/n-Si Heterojunction Diode and Optical Analysis of Quercetin Thin Film
(Amer Inst Physics, 2016) Tombak, Ahmet; Ozaydin, C.; Boga, M.; Kilicoglu, T.
Quercetin (3,5,7,3',4'-pentahydroxyflavone, QE), one of the most widely distributed flavonoids in fruits and vegetables, has been reported to possess a wide variety of biological effects, including anti-oxidative, anti-inflammatory, anti-apoptosis, hepatoprotective, renoprotective and neuroprotective effects. In this study organic-inorganic junctions were fabricated by forming quercetin complex thin film using spin coating technique on n-Si and evaporating Au metal on the film. Optical properties of quercetin thin film were studied with the help of spectrophotometer. The current-voltage (I-V) characteristic of Au/quercetin/n-Si heterojunction diode was investigated at room temperature in dark. Some basic parameters of the diode such as ideality factor, rectification ratio, barrier height, series resistance and shunt resistance were calculated using dark current-voltage measurement. It was also seen that the device had good sensitivity to the light under 40-100 mW/cm(2) illumination conditions.
Electrical properties of safranine T/p-Si organic/inorganic semiconductor devices
(Edp Sciences S A, 2010) Gullu, O.; Asubay, S.; Biber, M.; Kilicoglu, T.; Turut, A.
We investigated the current-voltage (I-V) and capacitance-voltage (C-V) characteristics of identically prepared safranine T/p-Si organic/inorganic Schottky devices (total 26 diodes) formed by evaporation of organic compound solution on p-Si semiconductor substrate. It was seen that the safranine T organic thin film on the p-Si substrate showed a good rectifying behavior. The barrier heights and ideality factors of all devices were extracted from the electrical characteristics. The mean barrier height and mean ideality factor from I-V measurements were calculated as 0.59 +/- 0.02 eV and 1.80 +/- 0.20, respectively. Also, the mean barrier height and mean acceptor doping concentration from C-V measurements were calculated as 0.67 +/- 0.10 eV and (6.96 +/- 0.37) x10(14) cm(-3), respectively. The discrepancy in the barrier height values obtained from I-V and C-V characteristics has been attributed to different nature of the measurements. The discrepancy between these values can also be due to the existence of the interfacial native oxide and the organic safranine T thin layer between the semiconductor substrate and top contact metal.
Electronic properties of the metal/organic interlayer/inorganic semiconductor sandwich device
(Pergamon-Elsevier Science Ltd, 2010) Gullu, O.; Kilicoglu, T.; Turut, A.
In this study, we prepared a Metal(Al)/Organic Interlayer(Congo Red=CR)/Inorganic Semiconductor (p-Si) (MIS) Schottky device formed by coating of an organic film on p-Si semiconductor wafer. The Al/CR/p-Si MIS device had a good rectifying behavior. By using the forward bias I-V characteristics, the values of ideality factor (n) and barrier height (Phi(b)) for the Al/CR/p-Si MIS device were obtained as 1.68 and 0.77 eV, respectively. It was seen that the Phi(b) value of 0.77 eV calculated for the Al/CR/p-Si MIS device was significantly higher than value of 0.50 eV of the conventional Al/p-Si Schottky diodes. Modification of the interfacial potential barrier of the Al/p-Si diode was achieved by using a thin interlayer of the CR organic material. This was attributed to the fact that the CR organic interlayer increased the effective barrier height by influencing the space charge region of Si. The interface-state density of the MIS diode was found to vary from 1.24 x 10(13) to 2.44 x 10(12) eV(-1) cm(-2). (C) 2009 Elsevier Ltd. All rights reserved.
The importance of the series resistance in calculating the characteristic parameters of the Schottky contacts
(Elsevier Science Bv, 2006) Aydin, M. E.; Akkilic, K.; Kilicoglu, T.
Cd/p-Si Schottky barrier diodes (SBDs) with and without the native oxide layer have been fabricated to determine the importance of the fact that the series resistance value is considered in calculating the interface state density distribution (ISDD) from the forward bias current-voltage (I-V) characteristics of the Cd/p-Si SBDs. The statistical analysis yielded mean values of 0.71 +/- 0.02 eV and 1.24 +/- 0.12 for the BH and ideality factor of the Cd/p-Si SBDs (15 dots) without the native oxide layer (MS), respectively, and mean values of 0.79 +/- 0.02 eV and 1.36 +/- 0.06 eV for the Cd/p-Si SBDs (28 dots) with the native oxide layer (metal-insulating layer-semiconductor (MIS)). The interface state density (Nss) distributions of the devices were calculated taking into account their series resistance values. At the same energy position near the top of the valence band, the interface state density values without taking into account the series resistance value of the devices are almost one order of magnitude larger than Nss obtained taking into account series resistance value. (c) 2006 Published by Elsevier B.V.
Interface control and photovoltaic properties of n-type silicon/metal junction by organic dye
(Elsevier, 2011) Yakuphanoglu, F.; Ocak, Y. S.; Kilicoglu, T.; Farooq, W. A.
The electronic parameters and photovoltaic properties of the Au/methylene blue/n-Si diodes were investigated by current-voltage and capacitance-conductance-frequency techniques. The diode exhibits a non-ideal behavior due the series resistance, organic layer and oxide layer. The barrier height (1.04 eV) of the Au/methylene blue/n-Si is higher than that of Au/n-Si Schottky diode (0.83 eV) due to an excess barrier formed by organic layer. The interface state density of the diode was determined using a conductance technique and was found to be 3.25 x 10(12) eV(-1) cm(-2). The diode shows a photovoltaic behavior with a maximum open circuit voltage V-oc of 0.23 V and short-circuit current I-sc of 20.8 mu A under 100 mW/cm(2). It is evaluated that Au/methylene blue/n-Si is an organic-on-inorganic photodiode with the obtained electronic parameters and methylene blue organic dye controls the interface and electrical properties of conventional metal/n-type silicon junction. (C) 2011 Elsevier B.V. All rights reserved.
Low- and high-frequency C-V characteristics of the contacts formed by adding a solution of the nonpolymeric organic compound on p-type Si substrate
(Elsevier, 2007) Ebeoglu, M. A.; Kilicoglu, T.; Aydin, M. E.
Al/quercetin/p-Si Schottky barrier diodes (SBDs) have been fabricated by adding a solution of the nonpolymeric organic compound quercetin in ethanol on top of p-Si substrate, and then evaporating the solvent. The quercetin/p-Si contact shows rectifying behaviour and the reverse curve exhibit a weak bias voltage dependence. Barrier height and ideality factor value of 0.86 and 1.06eV, respectively, for the device have been determined from the forward bias current-voltage (I-V)characteristics. The energy distribution of the interface state density located in the semiconductor band gap at quercetin/p-Si interface ranges from 2.12 x 10(12) cm(12) eV(-1) in (0.680-E-v)eV to 4.68 x 10(11) cm(-2) eV(-1) in (0.813-E-v) eV have been determined from the I-Vand the capacitance-voltage (C-V) characteristics (high-and low frequency). The interface state density has an exponential rise with bias from the midgap towards the top of the valence band. (C) 2007 Elsevier B.V. All rights reserved.
The novel transparent sputtered p-type CuO thin films and Ag/p-CuO/n-Si Schottky diode applications
(Elsevier Science Bv, 2015) Tombak, A.; Benhaliliba, M.; Ocak, Y. S.; Kilicoglu, T.
In the current paper, the physical properties and microelectronic parameters of direct current (DC) sputtered p-type CuO film and diode have been investigated. The film of CuO as oxide and p-type semiconductor is grown onto glass and n-Si substrates by reactive DC sputtering at 250 degrees C. After deposition, a post-annealing procedure is applied at various temperatures in ambient. Through this research, several parameters are determined such structural, optical and electrical magnitudes. The thickness of CuO thin films goes from 122 to 254 nm. A (111)-oriented cubic crystal structure is revealed by X-ray analysis. The grain size is roughly depending on the post-annealing temperature, it increases with temperature within the 144-285 nm range. The transmittance reaches 80% simultaneously in visible and infrared bands. The optical band gap is varied between 1.99 and 2.52 eV as a result of annealing temperature while the resistivity and the charge carrier mobility decrease with an increase in temperature from 135 to 14 Omega cm and 0.92 to 0.06 cm(2)/Vs, respectively. The surface of samples is homogenous, bright dots are visible when temperature reaches the highest value. As a diode, Ag/CuO/n-Si exhibits a non-ideal behavior and the ideality factor is about 3.5. By Norde method, the barrier height and the series resistance are extracted and found to be 0.96 V and 86.6 Omega respectively. (C) 2015 The Authors. Published by Elsevier B.V. This is an open access article under the CC BY-NC-ND license (http://creativecommons.org/licenses/by-nc-nd/4.0/).
Photovoltaic properties of Au/?-carotene/n-Si organic solar cells
(Amer Chemical Soc, 2006) Yakuphanoglu, F.; Aydin, M. E.; Kilicoglu, T.
Photovoltaic properties of Au/beta-carotene/n-Si organic solar cells characterized by current-voltage and capacitance-voltage measurements have been investigated. The photocurrent in the reverse direction increases with increasing illumination intensity. The I-sc increases linearly with light intensity. The I-sc dependence of light intensity follows a power law I-sc similar to F-alpha. The exponent alpha was found to be 1.38. This indicates a monomolecular recombination in this device. Au/beta-carotene/n-Si organic solar cells give an open-circuit voltage of 0.316 V and a short-circuit current of 2.33 x 10(-4) A at light intensity of 6 W/m(2). The best conversion efficiency for Au/beta-carotene/ n-Si solar cells was found to be 23.3% at a light intensity of 6 W/m(2).

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