Low- and high-frequency C-V characteristics of the contacts formed by adding a solution of the nonpolymeric organic compound on p-type Si substrate
[ X ]
Tarih
2007
Yazarlar
Dergi Başlığı
Dergi ISSN
Cilt Başlığı
Yayıncı
Elsevier
Erişim Hakkı
info:eu-repo/semantics/closedAccess
Özet
Al/quercetin/p-Si Schottky barrier diodes (SBDs) have been fabricated by adding a solution of the nonpolymeric organic compound quercetin in ethanol on top of p-Si substrate, and then evaporating the solvent. The quercetin/p-Si contact shows rectifying behaviour and the reverse curve exhibit a weak bias voltage dependence. Barrier height and ideality factor value of 0.86 and 1.06eV, respectively, for the device have been determined from the forward bias current-voltage (I-V)characteristics. The energy distribution of the interface state density located in the semiconductor band gap at quercetin/p-Si interface ranges from 2.12 x 10(12) cm(12) eV(-1) in (0.680-E-v)eV to 4.68 x 10(11) cm(-2) eV(-1) in (0.813-E-v) eV have been determined from the I-Vand the capacitance-voltage (C-V) characteristics (high-and low frequency). The interface state density has an exponential rise with bias from the midgap towards the top of the valence band. (C) 2007 Elsevier B.V. All rights reserved.
Açıklama
Anahtar Kelimeler
Schottky Diodes, Organic-Inorganic Semiconductor Contact, Quercetin
Kaynak
Physica B-Condensed Matter
WoS Q Değeri
Q3
Scopus Q Değeri
N/A
Cilt
395
Sayı
1-2
