The calculation of electronic parameters of an Al/Methyl red/p-si Schottky diode
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Tarih
2007
Yazarlar
Dergi Başlığı
Dergi ISSN
Cilt Başlığı
Yayıncı
Amer Inst Physics
Erişim Hakkı
info:eu-repo/semantics/closedAccess
Özet
The Al/methyl red/p-Si Schottky barrier diode has been fabricated by adding a solution of the non-polymeric organic compound methyl red in chloroform on top of p-Si substrate, and then evaporating the solvent. The methyl red/p-Si contact shows rectifying behaviour and the reverse curve exhibits weak bias voltage dependence. Electronic parameters of Al/methyl red/p-Si Schottky barrier diode were calculated by using current-voltage (I-V) curve and interface state density distribution properties were obtained by using capacitance method. The interface state density has an exponential rise with bias from the mid-gap towards the top of the valance band.
Açıklama
6th International Conference of the Balkan-Physical-Union -- AUG 22-26, 2006 -- Istanbul, TURKEY
Anahtar Kelimeler
Schottky Diodes, Organic-Inorganic Semiconductor Contact, Methyl Red
Kaynak
Six International Conference of The Balkan Physical Union
WoS Q Değeri
N/A
Scopus Q Değeri
Q4
Cilt
899
