The calculation of electronic parameters of an Ag/chitin/n-Si Schottky barrier diode
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Tarih
2006
Yazarlar
Dergi Başlığı
Dergi ISSN
Cilt Başlığı
Yayıncı
Elsevier Science Sa
Erişim Hakkı
info:eu-repo/semantics/closedAccess
Özet
We have formed polymeric organic compound chitin film on n-Si substrate by adding a solution of polymeric compound chifin in N,N-dimethylacetamide and lithium chloride on top of an n-Si substrate and then evaporating solvent. It has been seen that the chitin/n-Si contact has demonstrated clearly rectifying behavior and the reverse curves exhibit a weak bias voltage dependence by the current-voltage (I-V) curves studied at room temperature. The barrier height and ideality factor values of 0.959 eV and 1.553, respectively, for this structure have been obtained from the forward bias I-V characteristics. Furthermore, the energy distribution of the interface state density located in the semiconductor band gap at the chitin/n-Si substrate in the energy range from (E-c-0.897) to (E-c-0.574) eV have been determined from the I-V characteristics. The interface state density, N-55, ranges from 5.965 x 10(12) cm(-2) eV(-1) in (E-c-0.897) eV to 1.706 x 10(13) cm(-2) eV(-1) in (E-c-0.574) eV and has an exponential rise with bias this energy range. (c) 2006 Elsevier B.V. All rights reserved.
Açıklama
Anahtar Kelimeler
Schottky Barriers, Schottky Diodes, Polymeric Organic-Inorganic Semiconductor Contact, Chitin
Kaynak
Synthetic Metals
WoS Q Değeri
Q1
Scopus Q Değeri
Q1
Cilt
156
Sayı
14-15
