Current-voltage and capacitance-voltage characteristics of a Sn/Methylene Blue/p-Si Schottky diode
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Tarih
2009
Dergi Başlığı
Dergi ISSN
Cilt Başlığı
Yayıncı
Elsevier Science Sa
Erişim Hakkı
info:eu-repo/semantics/closedAccess
Özet
Electrical and interfacial properties of Sn/Methylene Blue (MB)/p-Si Schottky diode have been determined by using current-voltage (I-V) and capacitance-voltage (C-V) measurements of the device at room temperature. Cheung functions and modified Norde functions have been used to obtain the electrical characteristics such as barrier height and series resistance of the diode. It has been seen that the MB layer modifies the effective barrier height of the structure because the layer creates the physical barrier between the metal and the semiconductor. Electrical properties of the device obtained from C-V characteristics have been compared with the ones obtained from its I-V characteristics. It has been seen that at sufficiently high frequencies, the charge at the interface cannot follow an ac signal. The interface state density of the diode has been also calculated. (C) 2009 Elsevier B.V. All rights reserved.
Açıklama
Anahtar Kelimeler
Schottky Diode, Organic-Inorganic Heterojunction, Barrier Height, Interface Layer, Methylene Blue
Kaynak
Synthetic Metals
WoS Q Değeri
Q1
Scopus Q Değeri
Q1
Cilt
159
Sayı
15-16
