Current-voltage and capacitance-voltage characteristics of a Sn/Methylene Blue/p-Si Schottky diode

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dc.contributor.authorOcak, Y. S.
dc.contributor.authorKulakci, M.
dc.contributor.authorKilicoglu, T.
dc.contributor.authorTuran, R.
dc.contributor.authorAkkilic, K.
dc.date.accessioned2024-04-24T16:18:24Z
dc.date.available2024-04-24T16:18:24Z
dc.date.issued2009
dc.departmentDicle Üniversitesien_US
dc.description.abstractElectrical and interfacial properties of Sn/Methylene Blue (MB)/p-Si Schottky diode have been determined by using current-voltage (I-V) and capacitance-voltage (C-V) measurements of the device at room temperature. Cheung functions and modified Norde functions have been used to obtain the electrical characteristics such as barrier height and series resistance of the diode. It has been seen that the MB layer modifies the effective barrier height of the structure because the layer creates the physical barrier between the metal and the semiconductor. Electrical properties of the device obtained from C-V characteristics have been compared with the ones obtained from its I-V characteristics. It has been seen that at sufficiently high frequencies, the charge at the interface cannot follow an ac signal. The interface state density of the diode has been also calculated. (C) 2009 Elsevier B.V. All rights reserved.en_US
dc.identifier.doi10.1016/j.synthmet.2009.04.024
dc.identifier.endpage1607en_US
dc.identifier.issn0379-6779
dc.identifier.issue15-16en_US
dc.identifier.scopus2-s2.0-67651089702
dc.identifier.scopusqualityQ1
dc.identifier.startpage1603en_US
dc.identifier.urihttps://doi.org/10.1016/j.synthmet.2009.04.024
dc.identifier.urihttps://hdl.handle.net/11468/16070
dc.identifier.volume159en_US
dc.identifier.wosWOS:000269470200014
dc.identifier.wosqualityQ1
dc.indekslendigikaynakWeb of Science
dc.indekslendigikaynakScopus
dc.language.isoenen_US
dc.publisherElsevier Science Saen_US
dc.relation.ispartofSynthetic Metals
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanıen_US
dc.rightsinfo:eu-repo/semantics/closedAccessen_US
dc.subjectSchottky Diodeen_US
dc.subjectOrganic-Inorganic Heterojunctionen_US
dc.subjectBarrier Heighten_US
dc.subjectInterface Layeren_US
dc.subjectMethylene Blueen_US
dc.titleCurrent-voltage and capacitance-voltage characteristics of a Sn/Methylene Blue/p-Si Schottky diodeen_US
dc.titleCurrent-voltage and capacitance-voltage characteristics of a Sn/Methylene Blue/p-Si Schottky diode
dc.typeArticleen_US

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