The effect of Gd doping on the electrical and photoelectrical properties of Gd:ZnO/p-Si heterojunctions

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dc.contributor.authorBaturay, Silan
dc.contributor.authorOcak, Yusuf Selim
dc.contributor.authorKaya, Derya
dc.date.accessioned2024-04-24T16:14:59Z
dc.date.available2024-04-24T16:14:59Z
dc.date.issued2015
dc.departmentDicle Üniversitesien_US
dc.description.abstractUndoped ZnO thin films, as well as 1%, 3% and 5% Gd-doped ZnO films, were deposited on p-type Si using spin coating. The structural properties of these thin films were analysed using X-ray diffraction, and the current-voltage (I-V) and capacitance-voltage (C-V) characteristics of the Gd:ZnO/p-Si heterojunctions were compared with those of the undoped ZnO/p-Si heterojunctions. We found that Gd doping had a strong effect on the performance of the devices, and that the Gd:ZnO/p-Si heterojunctions formed with 1% Gd-doped ZnO were the most strongly rectifying, and had the highest barrier height and the lowest series resistance. Furthermore, the I-V measurements of the 1% Gd-doped ZnO/p-Si heterojunetion exhibited the strongest response to light. (C) 2015 Elsevier B.V. All rights reserved.en_US
dc.identifier.doi10.1016/j.jallcom.2015.04.212
dc.identifier.endpage33en_US
dc.identifier.issn0925-8388
dc.identifier.issn1873-4669
dc.identifier.scopus2-s2.0-84929190987
dc.identifier.scopusqualityQ1
dc.identifier.startpage29en_US
dc.identifier.urihttps://doi.org/10.1016/j.jallcom.2015.04.212
dc.identifier.urihttps://hdl.handle.net/11468/15574
dc.identifier.volume645en_US
dc.identifier.wosWOS:000357146300006
dc.identifier.wosqualityQ1
dc.indekslendigikaynakWeb of Science
dc.indekslendigikaynakScopus
dc.language.isoenen_US
dc.publisherElsevier Science Saen_US
dc.relation.ispartofJournal of Alloys and Compounds
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanıen_US
dc.rightsinfo:eu-repo/semantics/closedAccessen_US
dc.subjectZnoen_US
dc.subjectGd Dopingen_US
dc.subjectHeterojunctionen_US
dc.subjectSeries Resistanceen_US
dc.subjectPhotoelectrical Propertiesen_US
dc.titleThe effect of Gd doping on the electrical and photoelectrical properties of Gd:ZnO/p-Si heterojunctionsen_US
dc.titleThe effect of Gd doping on the electrical and photoelectrical properties of Gd:ZnO/p-Si heterojunctions
dc.typeArticleen_US

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