The effect of Gd doping on the electrical and photoelectrical properties of Gd:ZnO/p-Si heterojunctions
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Tarih
2015
Yazarlar
Dergi Başlığı
Dergi ISSN
Cilt Başlığı
Yayıncı
Elsevier Science Sa
Erişim Hakkı
info:eu-repo/semantics/closedAccess
Özet
Undoped ZnO thin films, as well as 1%, 3% and 5% Gd-doped ZnO films, were deposited on p-type Si using spin coating. The structural properties of these thin films were analysed using X-ray diffraction, and the current-voltage (I-V) and capacitance-voltage (C-V) characteristics of the Gd:ZnO/p-Si heterojunctions were compared with those of the undoped ZnO/p-Si heterojunctions. We found that Gd doping had a strong effect on the performance of the devices, and that the Gd:ZnO/p-Si heterojunctions formed with 1% Gd-doped ZnO were the most strongly rectifying, and had the highest barrier height and the lowest series resistance. Furthermore, the I-V measurements of the 1% Gd-doped ZnO/p-Si heterojunetion exhibited the strongest response to light. (C) 2015 Elsevier B.V. All rights reserved.
Açıklama
Anahtar Kelimeler
Zno, Gd Doping, Heterojunction, Series Resistance, Photoelectrical Properties
Kaynak
Journal of Alloys and Compounds
WoS Q Değeri
Q1
Scopus Q Değeri
Q1
Cilt
645
