An organic-inorganic rectifying contact based on a ZnPc derivative

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dc.contributor.authorOzerden, Enise
dc.contributor.authorYildiz, Mustafa
dc.contributor.authorOcak, Yusuf Selim
dc.contributor.authorTombak, Ahmet
dc.contributor.authorKilicoglu, Tahsin
dc.date.accessioned2024-04-24T16:15:41Z
dc.date.available2024-04-24T16:15:41Z
dc.date.issued2014
dc.departmentDicle Üniversitesien_US
dc.descriptionInternational Semiconductor Science and Technology Conference (ISSTC) -- JAN 13-15, 2014 -- Istanbul, TURKEYen_US
dc.description.abstractAn organic-inorganic rectifying contact was fabricated by forming a thin film of a Zinc Phthalocyanine (ZnPc) derivative, Zinc 2,3,9,10,16,17,23,24-octakis(octyloxy)-29H, 31H-phthalocyanine (oc-ZnPc), on a p-Si wafer and evaporating Al on the structure. The current-voltage (I-V) and capacitance-voltage (C-V) measurements of Al/oc-ZnPc/p-Si structure were taken in dark at room temperature. The I-V measurements proved that the structure showed excellent rectification. Some basic diode parameters like ideality factor and barrier height were calculated from lnI-V plot. Ideality factor and barrier height values were found as 144 and 0.78 eV, respectively. The series resistance value of the structure was determined as 5.46 k Omega by means of Norde functions. The C-V measurements were taken for various frequencies and it was seen that the capacitance value decreased with increasing frequency. In addition I-V measurements of the Al/oc-ZaPc/p-Si/Al were repeated under light which had illumination intensity of 40-100 mW/cm(2). It was observed that reverse bias current of the diode increased with the light intensity. Therefore, the structure showed photodiode characteristics and it can be used for electrical and optoelectronic applications. (C) 2014 Elsevier Ltd. All rights reserved.en_US
dc.identifier.doi10.1016/j.mssp.2014.06.006
dc.identifier.endpage76en_US
dc.identifier.issn1369-8001
dc.identifier.issn1873-4081
dc.identifier.scopus2-s2.0-84911446002
dc.identifier.scopusqualityQ1
dc.identifier.startpage72en_US
dc.identifier.urihttps://doi.org/10.1016/j.mssp.2014.06.006
dc.identifier.urihttps://hdl.handle.net/11468/15892
dc.identifier.volume28en_US
dc.identifier.wosWOS:000345645000013
dc.identifier.wosqualityQ2
dc.indekslendigikaynakWeb of Science
dc.indekslendigikaynakScopus
dc.language.isoenen_US
dc.publisherElsevier Sci Ltden_US
dc.relation.ispartofMaterials Science in Semiconductor Processing
dc.relation.publicationcategoryKonferans Öğesi - Uluslararası - Kurum Öğretim Elemanıen_US
dc.rightsinfo:eu-repo/semantics/closedAccessen_US
dc.subjectSchottky Diodesen_US
dc.subjectZinc Phthalocyanineen_US
dc.subjectNorde Functionen_US
dc.subjectSeries Resistanceen_US
dc.titleAn organic-inorganic rectifying contact based on a ZnPc derivativeen_US
dc.titleAn organic-inorganic rectifying contact based on a ZnPc derivative
dc.typeConference Objecten_US

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