An organic-inorganic rectifying contact based on a ZnPc derivative
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Tarih
2014
Dergi Başlığı
Dergi ISSN
Cilt Başlığı
Yayıncı
Elsevier Sci Ltd
Erişim Hakkı
info:eu-repo/semantics/closedAccess
Özet
An organic-inorganic rectifying contact was fabricated by forming a thin film of a Zinc Phthalocyanine (ZnPc) derivative, Zinc 2,3,9,10,16,17,23,24-octakis(octyloxy)-29H, 31H-phthalocyanine (oc-ZnPc), on a p-Si wafer and evaporating Al on the structure. The current-voltage (I-V) and capacitance-voltage (C-V) measurements of Al/oc-ZnPc/p-Si structure were taken in dark at room temperature. The I-V measurements proved that the structure showed excellent rectification. Some basic diode parameters like ideality factor and barrier height were calculated from lnI-V plot. Ideality factor and barrier height values were found as 144 and 0.78 eV, respectively. The series resistance value of the structure was determined as 5.46 k Omega by means of Norde functions. The C-V measurements were taken for various frequencies and it was seen that the capacitance value decreased with increasing frequency. In addition I-V measurements of the Al/oc-ZaPc/p-Si/Al were repeated under light which had illumination intensity of 40-100 mW/cm(2). It was observed that reverse bias current of the diode increased with the light intensity. Therefore, the structure showed photodiode characteristics and it can be used for electrical and optoelectronic applications. (C) 2014 Elsevier Ltd. All rights reserved.
Açıklama
International Semiconductor Science and Technology Conference (ISSTC) -- JAN 13-15, 2014 -- Istanbul, TURKEY
Anahtar Kelimeler
Schottky Diodes, Zinc Phthalocyanine, Norde Function, Series Resistance
Kaynak
Materials Science in Semiconductor Processing
WoS Q Değeri
Q2
Scopus Q Değeri
Q1
Cilt
28
