Structural, optical, and electrical characterizations of Cr-doped CuO thin films

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dc.authorid0000-0002-8122-6671en_US
dc.authorid0000-0001-9489-5324en_US
dc.contributor.authorBaturay, Şilan
dc.contributor.authorCandan, İlhan
dc.contributor.authorÖzaydin, Cihat
dc.date.accessioned2022-03-10T07:28:37Z
dc.date.available2022-03-10T07:28:37Z
dc.date.issued2022en_US
dc.departmentDicle Üniversitesi, Fen Fakültesi, Fizik Bölümüen_US
dc.descriptionWOS:000755597900002
dc.description.abstractThe polycrystalline copper oxide (CuO) thin films have been produced using the method of spin coating on the soda-lime glass (SLG) as well as the substrate of p-type Si (1 0 0) wafers at 500 degrees C in furnace. The obtained undoped and Cr-doped thin films of CuO have been comprehensively characterized via X-ray diffraction (XRD), ultraviolet-vis (UV-Vis) spectroscopy, the current-voltage (I-V), and capacitance-voltage (C-V) characteristics for providing information on quality of the crystalline nature, change in energy band gap and electrical properties, respectively. Structural analysis results obtained from XRD data demonstrate that CuO films in conjunction with Cr doping indicated that all thin films have monoclinic polycrystalline nature, with two main peaks of (- 111) and (111) with d(hkl) of about 2.52 and 2.32 angstrom, respectively. The transmittance and energy band gap values of undoped and Cr-doped thin films of CuO ranging in varying concentration ratio have been determined in the wavelength region of 300-1100 nm. The highest value has been found to be around 33% related to 3% Cr doping in the visible range. UV-Vis spectrum analysis results indicate that both transmittance value and energy band gap value of the CuO films are changed with the increase in Cr doping ratio in CuO solution at room temperature. The band gap energy was determined to be between 1.67 and 2.03 eV with the increase in Cr concentration. The I-V and C-V characteristics of Cr:CuO/p-Si diodes were associated with the CuO/p-Si diodes. Although the best rectification ratio (RR) is seen in the 1% Cr-doped diode (RR = 2.33 x 10(3) for +/- 1 V), other diodes also have significant rectification behavior. It is seen that doping of Cr had a significant change on the obtained devices' performance. Thus, the Cr:CuO/p-Si diodes generated by 1% Cr doping using spin coating method had the highest light sensitivity compared with those of the other diodes.en_US
dc.identifier.citationBaturay, Ş., Candan, İ. ve Özaydin, C (2022). Structural, optical, and electrical characterizations of Cr-doped CuO thin films. Journal of Materials Science-Materials in Electronics, 33(9), 7275-7287.en_US
dc.identifier.doi10.1007/s10854-022-07918-2
dc.identifier.endpage7287
dc.identifier.issn0957-4522
dc.identifier.issn1573-482X
dc.identifier.issue9
dc.identifier.scopus2-s2.0-85124734460
dc.identifier.scopusqualityQ2
dc.identifier.startpage7275
dc.identifier.urihttps://link.springer.com/article/10.1007/s10854-022-07918-2
dc.identifier.urihttps://hdl.handle.net/11468/9369
dc.identifier.volume33en_US
dc.identifier.wosWOS:000755597900002
dc.identifier.wosqualityQ2
dc.indekslendigikaynakWeb of Science
dc.indekslendigikaynakScopus
dc.institutionauthorBaturay, Şilan
dc.institutionauthorCandan, İlhan
dc.language.isoenen_US
dc.publisherSpringeren_US
dc.relation.ispartofJournal of Materials Science-Materials in Electronics
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanıen_US
dc.rightsinfo:eu-repo/semantics/openAccessen_US
dc.subjectGas-sensing propertiesen_US
dc.subjectTemperature-dependenceen_US
dc.subjectMagnetic-propertiesen_US
dc.subjectSpray-pyrolysisen_US
dc.subjectBarrier heightsen_US
dc.subjectSIen_US
dc.subjectHeterojunctionen_US
dc.subjectZnotransportdiodesen_US
dc.titleStructural, optical, and electrical characterizations of Cr-doped CuO thin filmsen_US
dc.titleStructural, optical, and electrical characterizations of Cr-doped CuO thin films
dc.typeArticleen_US

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