Analysis of electrical and photoelectrical properties of ZnO/p-InP heterojunction

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dc.contributor.authorOcak, Yusuf Selim
dc.contributor.authorKulakci, Mustafa
dc.contributor.authorTuran, Rasit
dc.contributor.authorKilicoglu, Tahsin
dc.contributor.authorGullu, Omer
dc.date.accessioned2024-04-24T16:14:59Z
dc.date.available2024-04-24T16:14:59Z
dc.date.issued2011
dc.departmentDicle Üniversitesien_US
dc.description.abstractAZnO/p-InP heterojunction has been fabricated by dc sputtering of ZnO on p-InP. It has been observed that the device has a good rectification. The electrical properties of the device such as ideality factor, barrier height, series resistance have been calculated using its current-voltage (I-V) measurements between 300 and 380K with 20K intervals. The short current density (J(sc)) and open circuit voltage (V-oc) parameters have been determined between 40 and 100mW/cm(2). The photovoltaic parameters of the device have been also determined under 100mW/cm(2) and AM1.5 illumination condition. (C) 2011 Elsevier B.V. All rights reserved.en_US
dc.identifier.doi10.1016/j.jallcom.2011.03.114
dc.identifier.endpage6634en_US
dc.identifier.issn0925-8388
dc.identifier.issn1873-4669
dc.identifier.issue23en_US
dc.identifier.scopus2-s2.0-79955750717
dc.identifier.scopusqualityQ1
dc.identifier.startpage6631en_US
dc.identifier.urihttps://doi.org/10.1016/j.jallcom.2011.03.114
dc.identifier.urihttps://hdl.handle.net/11468/15572
dc.identifier.volume509en_US
dc.identifier.wosWOS:000290304200026
dc.identifier.wosqualityQ1
dc.indekslendigikaynakWeb of Science
dc.indekslendigikaynakScopus
dc.language.isoenen_US
dc.publisherElsevier Science Saen_US
dc.relation.ispartofJournal of Alloys and Compounds
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanıen_US
dc.rightsinfo:eu-repo/semantics/closedAccessen_US
dc.subjectZinc Oxideen_US
dc.subjectIndium Phosphateen_US
dc.subjectHeterojunctionen_US
dc.subjectSolar Cellen_US
dc.subjectSputteringen_US
dc.titleAnalysis of electrical and photoelectrical properties of ZnO/p-InP heterojunctionen_US
dc.titleAnalysis of electrical and photoelectrical properties of ZnO/p-InP heterojunction
dc.typeArticleen_US

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