Analysis of electrical and photoelectrical properties of ZnO/p-InP heterojunction
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Tarih
2011
Dergi Başlığı
Dergi ISSN
Cilt Başlığı
Yayıncı
Elsevier Science Sa
Erişim Hakkı
info:eu-repo/semantics/closedAccess
Özet
AZnO/p-InP heterojunction has been fabricated by dc sputtering of ZnO on p-InP. It has been observed that the device has a good rectification. The electrical properties of the device such as ideality factor, barrier height, series resistance have been calculated using its current-voltage (I-V) measurements between 300 and 380K with 20K intervals. The short current density (J(sc)) and open circuit voltage (V-oc) parameters have been determined between 40 and 100mW/cm(2). The photovoltaic parameters of the device have been also determined under 100mW/cm(2) and AM1.5 illumination condition. (C) 2011 Elsevier B.V. All rights reserved.
Açıklama
Anahtar Kelimeler
Zinc Oxide, Indium Phosphate, Heterojunction, Solar Cell, Sputtering
Kaynak
Journal of Alloys and Compounds
WoS Q Değeri
Q1
Scopus Q Değeri
Q1
Cilt
509
Sayı
23
