Influence of Mn doping on electrical properties of TiO2/Si heterojunction diode

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dc.authorid0000-0002-8122-6671en_US
dc.authorid0000-0003-3046-6138en_US
dc.authorid0000-0001-9489-5324en_US
dc.authorid0000-0002-7546-4243en_US
dc.contributor.authorBaturay, Şilan
dc.contributor.authorBiçer, Ömer
dc.contributor.authorGezgin, Serap Yiğit
dc.contributor.authorCandan, İlhan
dc.contributor.authorGümgüm, Hadice Budak
dc.contributor.authorKılıç, Hamdi Şükür
dc.date.accessioned2023-10-02T12:49:04Z
dc.date.available2023-10-02T12:49:04Z
dc.date.issued2023en_US
dc.departmentDicle Üniversitesi, Fen Fakültesi, Fizik Bölümüen_US
dc.description.abstractIn this special work, two types of material, which are undoped and Mn doped TiO2 thin films, have been produced by spin coating technique, and then their structural, morphological and optical properties have been measured at different Mn doping rates. Four different doping ratios, undoped, 1, 3 and 5% Mn doped TiO2 have been both experimentally and theoretically investigated and some significant enhancements have been reported. The results of X-ray diffraction (XRD) such as dislocation density, strain, and crystallite size have indicated that undoped, 1, 3 and 5% Mn doped TiO2 thin films had the phase of anatase at 450 °C. It has been observed that the peak intensity of 3% Mn doped TiO2 films has decreased compared to undoped and 1% Mn doped TiO2 while the peak intensity has increased for 5% Mn doped TiO2. The refractive indices and dielectric coefficients of the undoped and Mn doped TiO2 thin films have also been calculated. The undoped and Mn doped TiO2/p-Si heterojunction diodes has exhibited photosensitive behaviour in the illuminated environment. 1% Mn doped TiO2/p-Si heterojunction diode indicated the highest photocurrent. The electrical parameters of all diodes have been calculated and compared to the conventional J–V and Norde methods. Additionally, 1% Mn doped TiO2/p-Si heterojunction diode has been modelled by using the SCAPS-1D program, and J ph values have also been calculated based on the shallow donor density (N D ). The experimental and theoretical J ph values of this diode were found to be compatible with each other.en_US
dc.identifier.citationBaturay, Ş., Biçer, Ö., Gezgin, S. Y., Candan, İ., Budak, H. G. ve Kılıç, H. Ş. (2023). Influence of Mn doping on electrical properties of TiO2/Si heterojunction diode. Zeitschrift fur Naturforschung - Section A Journal of Physical Sciences, 78(6), 563-578.en_US
dc.identifier.doi10.1515/zna-2023-0015
dc.identifier.endpage578en_US
dc.identifier.issn0932-0784
dc.identifier.issn1865-7109
dc.identifier.issue6en_US
dc.identifier.scopus2-s2.0-85151543409
dc.identifier.scopusqualityQ2
dc.identifier.startpage563en_US
dc.identifier.urihttps://www.degruyter.com/document/doi/10.1515/zna-2023-0015/html
dc.identifier.urihttps://hdl.handle.net/11468/12648
dc.identifier.volume78en_US
dc.identifier.wosWOS:000957587100001
dc.identifier.wosqualityN/A
dc.indekslendigikaynakWeb of Science
dc.indekslendigikaynakScopus
dc.institutionauthorBaturay, Şilan
dc.institutionauthorBiçer, Ömer
dc.institutionauthorCandan, İlhan
dc.institutionauthorGümgüm, Hadice Budak
dc.language.isoenen_US
dc.publisherDe Gruyter Open Ltd.en_US
dc.relation.ispartofZeitschrift fur Naturforschung - Section A Journal of Physical Sciences
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanıen_US
dc.rightsinfo:eu-repo/semantics/closedAccessen_US
dc.subjectDiodeen_US
dc.subjectJ-V characterizationen_US
dc.subjectHeterojunctionen_US
dc.subjectMn dopeden_US
dc.subjectPhotocurrenten_US
dc.subjectSCAPS-1Den_US
dc.subjectThin filmen_US
dc.subjectTiO2en_US
dc.titleInfluence of Mn doping on electrical properties of TiO2/Si heterojunction diodeen_US
dc.titleInfluence of Mn doping on electrical properties of TiO2/Si heterojunction diode
dc.typeArticleen_US

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