Conversion from p- to n-Type Conductivity in CuO Thin Films Through Zr Doping

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dc.contributor.authorBaturay, Silan
dc.date.accessioned2024-04-24T16:02:31Z
dc.date.available2024-04-24T16:02:31Z
dc.date.issued2022
dc.departmentDicle Üniversitesien_US
dc.description.abstractCuO films with Zr doping were successfully fabricated on substrates of soda-lime glass (SLG) using a spin-coating method at various doping concentrations. X-ray diffraction (XRD) patterns for pure and Zr-doped CuO thin films indicated that all thin CuO films have a monoclinic polycrystalline nature, with two maximum peaks (-111) and (111). The dislocation density values of the (-111) and (111) planes are increased from 13.4 x 10(14) to 34.9 x 10(14) m(-2) and from 26 x 10(14) to 42.7 x 10(14) m(-2), respectively, owing to the expansion of structural parameters with Zr dopant content. Scanning electron microscopy (SEM) indicated nanostructure particles uniformly distributed on all thin-film surfaces without any agglomerated nanostructure particles. The thickness of CuO films in conjunction with Zr doping is approximately 460 nm. The EDX spectrum of pure CuO in thin film contains Cu and O elements; 1%, 2%, and 3% Zr-doped CuO thin films contain Zr, Cu, and O elements, as expected. Atomic force microscopy (AFM) figures indicate that the surface topologies of thin films are uniformly distributed. Ultraviolet-visible spectroscopy (UV-Vis) measurements of the thin films revealed that the transmittance increased from 25% to 45% in the visible range with increasing Zr concentration at room temperature. The energy band gap increased from 1.67 to 2.03 eV with increasing Zr concentration. At room temperature, a Hall effect system was used to investigate the electrical parameters, including carrier concentration, resistivity, conductivity type, and hole mobility of the CuO films with Zr doping. Conductivity type conversion was observed with 2% and 3% Zr-doped CuO, and confirmed by capacity-voltage (C-V) measurements. The charge-carrier concentration of the samples ranged from 1.08 x 10(16) to 5.06 x 10(18) cm(-3) with Zr doping. Thus, the optical and electrical properties of CuO thin film such as the band gap energy, transmittance, and carrier mobility can be modified.en_US
dc.description.sponsorshipScientific Research Projects Coordination Unit of Dicle University [FEN.18.007]en_US
dc.description.sponsorshipThis study was funded by the Scientific Research Projects Coordination Unit of Dicle University for the support with the number FEN.18.007.en_US
dc.identifier.doi10.1007/s11664-022-09836-9
dc.identifier.endpage5654en_US
dc.identifier.issn0361-5235
dc.identifier.issn1543-186X
dc.identifier.issue10en_US
dc.identifier.scopus2-s2.0-85136751527
dc.identifier.scopusqualityQ2
dc.identifier.startpage5644en_US
dc.identifier.urihttps://doi.org/10.1007/s11664-022-09836-9
dc.identifier.urihttps://hdl.handle.net/11468/14820
dc.identifier.volume51en_US
dc.identifier.wosWOS:000832583100004
dc.identifier.wosqualityQ3
dc.indekslendigikaynakWeb of Science
dc.indekslendigikaynakScopus
dc.language.isoenen_US
dc.publisherSpringeren_US
dc.relation.ispartofJournal of Electronic Materials
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanıen_US
dc.rightsinfo:eu-repo/semantics/closedAccessen_US
dc.subjectN-Type Cuoen_US
dc.subjectZirconium Dopingen_US
dc.subjectElectrical Propertiesen_US
dc.subjectMobilityen_US
dc.subjectCapacity-Voltageen_US
dc.titleConversion from p- to n-Type Conductivity in CuO Thin Films Through Zr Dopingen_US
dc.titleConversion from p- to n-Type Conductivity in CuO Thin Films Through Zr Doping
dc.typeArticleen_US

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