Conversion from p- to n-Type Conductivity in CuO Thin Films Through Zr Doping
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Tarih
2022
Yazarlar
Dergi Başlığı
Dergi ISSN
Cilt Başlığı
Yayıncı
Springer
Erişim Hakkı
info:eu-repo/semantics/closedAccess
Özet
CuO films with Zr doping were successfully fabricated on substrates of soda-lime glass (SLG) using a spin-coating method at various doping concentrations. X-ray diffraction (XRD) patterns for pure and Zr-doped CuO thin films indicated that all thin CuO films have a monoclinic polycrystalline nature, with two maximum peaks (-111) and (111). The dislocation density values of the (-111) and (111) planes are increased from 13.4 x 10(14) to 34.9 x 10(14) m(-2) and from 26 x 10(14) to 42.7 x 10(14) m(-2), respectively, owing to the expansion of structural parameters with Zr dopant content. Scanning electron microscopy (SEM) indicated nanostructure particles uniformly distributed on all thin-film surfaces without any agglomerated nanostructure particles. The thickness of CuO films in conjunction with Zr doping is approximately 460 nm. The EDX spectrum of pure CuO in thin film contains Cu and O elements; 1%, 2%, and 3% Zr-doped CuO thin films contain Zr, Cu, and O elements, as expected. Atomic force microscopy (AFM) figures indicate that the surface topologies of thin films are uniformly distributed. Ultraviolet-visible spectroscopy (UV-Vis) measurements of the thin films revealed that the transmittance increased from 25% to 45% in the visible range with increasing Zr concentration at room temperature. The energy band gap increased from 1.67 to 2.03 eV with increasing Zr concentration. At room temperature, a Hall effect system was used to investigate the electrical parameters, including carrier concentration, resistivity, conductivity type, and hole mobility of the CuO films with Zr doping. Conductivity type conversion was observed with 2% and 3% Zr-doped CuO, and confirmed by capacity-voltage (C-V) measurements. The charge-carrier concentration of the samples ranged from 1.08 x 10(16) to 5.06 x 10(18) cm(-3) with Zr doping. Thus, the optical and electrical properties of CuO thin film such as the band gap energy, transmittance, and carrier mobility can be modified.
Açıklama
Anahtar Kelimeler
N-Type Cuo, Zirconium Doping, Electrical Properties, Mobility, Capacity-Voltage
Kaynak
Journal of Electronic Materials
WoS Q Değeri
Q3
Scopus Q Değeri
Q2
Cilt
51
Sayı
10
