The low resistive and transparent Al-doped SnO2 films: p-type conductivity, nanostructures and photoluminescence

Basit Öğe Kaydı
dc.contributor.authorBenouis, CE
dc.contributor.authorBenhaliliba, M
dc.contributor.authorMouffak, Z.
dc.contributor.authorAvila-Garcia, A.
dc.contributor.authorTiburcio-Silver, A.
dc.contributor.authorLopez, M. Ortega
dc.contributor.authorTrujillo, R. Romano
dc.contributor.authorOcak, Y. S.
dc.date.accessioned2014-11-14T08:53:59Z
dc.date.available2014-11-14T08:53:59Z
dc.date.issued2014
dc.department0-Belirleneceken_US
dc.description.abstractIn this work, we study the crystalline structure, surface morphology, transmittance, optical bandgap and n/p type inversion of tin oxide (SnO2). The Nanostructured films of Al-doped SnO2 were successfully produced onto ITO-coated glass substrates via the spray pyrolysis method at a deposition temperature of 300 degrees C. A (101) and (211)-oriented tetragonal crystal structure was confirmed by X-ray patterns; and grain sizes varied within the range 8 42 nm. The films were polycrystalline, showing a high transparency in the visible (VIS) and infrared (IR) spectra. The optical bandgap was estimated to be around 3.4 eV. The atomic force microscopy (AFM) analysis showed the nanostructures consisting of nanotips, nanopatches, nanopits and nanobubbles. The samples exhibited high conductivity that ranged from 0.55 to 10(4) (S/cm) at ambient and showed an inversion from n to p-type as well as a degenerate semiconductor characters with a bulk concentration reaching 1.7 x 10(19) cm (3). The photoluminescence measurements reveal the detection of violet, green and yellow emissions. (C) 2014 Elsevier B.V. All rights reserved.en_US
dc.identifier.citationBenouis, CE., Benhaliliba, M., Mouffak, Z., Avila-Garcia, A., Tiburcio-Silver, A. , Lopez, M. Ortega ,Trujillo, R. Romano ,Ocak, Y. S. (2014).The low resistive and transparent Al-doped SnO2 films: p-type conductivity, nanostructures and photoluminescence.Lausanne: ELSEVIER SCIENCE SAen_US
dc.identifier.doi10.1016/j.jallcom.2014.03.046
dc.identifier.scopus2-s2.0-84898025951
dc.identifier.scopusqualityN/A
dc.identifier.urihttps://hdl.handle.net/11468/399
dc.identifier.urihttp://ac.els-cdn.com/S0925838814006239/1-s2.0-S0925838814006239-main.pdf?_tid=62abe76e-6bdb-11e4-a885-00000aacb35e&acdnat=1415955252_eaf8670a7f6847b597b3cdb37ac91c8c
dc.identifier.wosWOS:000335505100033
dc.identifier.wosqualityQ1
dc.indekslendigikaynakWeb of Science
dc.indekslendigikaynakScopus
dc.institutionauthor0-Belirlenecek
dc.language.isoenen_US
dc.publisherELSEVIER SCIENCE SA, PO BOX 564, 1001 LAUSANNE, SWITZERLANDen_US
dc.relation.publicationcategory0-Belirleneceken_US
dc.rightsinfo:eu-repo/semantics/closedAccessen_US
dc.subjectSprayed Al:SnO2 filmsen_US
dc.subjectITO coated glass substrateen_US
dc.subjectAFMen_US
dc.subjectPhotoluminescenceen_US
dc.subjectNanostructures; n/p-Type conductivityen_US
dc.titleThe low resistive and transparent Al-doped SnO2 films: p-type conductivity, nanostructures and photoluminescenceen_US
dc.titleThe low resistive and transparent Al-doped SnO2 films: p-type conductivity, nanostructures and photoluminescence
dc.typeArticleen_US

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