The nanostructure based SnS chalcogenide semiconductor: A detailed investigation of physical and electrical properties

Basit Öğe Kaydı
dc.authorid0000-0002-8651-6379en_US
dc.authorid0000-0001-8754-1720en_US
dc.contributor.authorBenhaliliba, Mostefa
dc.contributor.authorAyeshamariam, Abbas
dc.contributor.authorOcak, Yusuf Selim
dc.date.accessioned2024-10-17T06:34:15Z
dc.date.available2024-10-17T06:34:15Z
dc.date.issued2024en_US
dc.departmentDicle Üniversitesien_US
dc.description.abstractIn this research, we fabricate SnS films using a low-cost spray pyrolysis technique. Several parameters such as grain size, textural coefficient, Sn concentration, root mean square (RMS), optical band gap, Urbach and dispersion energy are determined by the mean of X-ray diffraction pattern, UV-Vis measurements, surface morphology observation by scanning electron microscopy (SEM)-energy dispersive X-ray spectroscopy (EDX), transmission electron microscopy (TEM), selective area electron diffraction (SAED) and atomic force microscopy (AFM). Furthermore, SnS thin films exhibit a polycrystalline structure having a low grain size of 6.1 nm along principal (111) orientation. The optical band gap is around 1.9 eV and Urbach energy is of 740 meV. The dielectric parameters of chalcogenide SnS thin film are varying with photon energy within ultraviolet-visible-infrared (Uv-Vis-IR) bands. Besides, the single oscillator E0 and Ed energies are found to be 2.03 and 3.28 eV, respectively, using the Wemple and DiDomenico (WDD) model. Electrical measurements of SnS thin films deposited onto Indium Tin Oxide (ITO) substrate are accomplished and current-voltage (I–V) characteristics of SnO2 / SnS/ITO, are shaped in dark and room temperature conditions. Photovoltaic parameters like open circuit voltage (Voc), short circuit current (Isc), fill factor (FF) and power conversion efficiency (η) values are determined and SnO2 / SnS/ITO junction records the highest values.en_US
dc.identifier.citationBenhaliliba, M., Ayeshamariam, A. ve Ocak, Y. S. (2024). The nanostructure based SnS chalcogenide semiconductor: A detailed investigation of physical and electrical properties. Periodica Polytechnica Chemical Engineering, 68(3), 326-337.en_US
dc.identifier.endpage337en_US
dc.identifier.issn0324-5853
dc.identifier.issue3en_US
dc.identifier.scopus2-s2.0-85202803556
dc.identifier.scopusqualityQ2
dc.identifier.startpage326en_US
dc.identifier.urihttps://pp.bme.hu/ch/article/view/36830
dc.identifier.urihttps://hdl.handle.net/11468/28852
dc.identifier.volume68en_US
dc.identifier.wosWOS:001276249600001
dc.identifier.wosqualityQ3
dc.indekslendigikaynakWeb of Science
dc.indekslendigikaynakScopus
dc.institutionauthorOcak, Yusuf Selim
dc.language.isoenen_US
dc.publisherBudapest University of Technology and Economicsen_US
dc.relation.ispartofPeriodica Polytechnica Chemical Engineering
dc.relation.isversionof10.3311/PPch.36830en_US
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanıen_US
dc.rightsinfo:eu-repo/semantics/openAccessen_US
dc.subjectJunctionen_US
dc.subjectNanostructuresen_US
dc.subjectSnS chalcogenide thin filmen_US
dc.subjectSpray pyrolysisen_US
dc.subjectTransmittanceen_US
dc.subjectX-ray analysisen_US
dc.titleThe nanostructure based SnS chalcogenide semiconductor: A detailed investigation of physical and electrical propertiesen_US
dc.titleThe nanostructure based SnS chalcogenide semiconductor: A detailed investigation of physical and electrical properties
dc.typeArticleen_US

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