The nanostructure based SnS chalcogenide semiconductor: A detailed investigation of physical and electrical properties
Yükleniyor...
Tarih
2024
Dergi Başlığı
Dergi ISSN
Cilt Başlığı
Yayıncı
Budapest University of Technology and Economics
Erişim Hakkı
info:eu-repo/semantics/openAccess
Özet
In this research, we fabricate SnS films using a low-cost spray pyrolysis technique. Several parameters such as grain size, textural coefficient, Sn concentration, root mean square (RMS), optical band gap, Urbach and dispersion energy are determined by the mean of X-ray diffraction pattern, UV-Vis measurements, surface morphology observation by scanning electron microscopy (SEM)-energy dispersive X-ray spectroscopy (EDX), transmission electron microscopy (TEM), selective area electron diffraction (SAED) and atomic force microscopy (AFM). Furthermore, SnS thin films exhibit a polycrystalline structure having a low grain size of 6.1 nm along principal (111) orientation. The optical band gap is around 1.9 eV and Urbach energy is of 740 meV. The dielectric parameters of chalcogenide SnS thin film are varying with photon energy within ultraviolet-visible-infrared (Uv-Vis-IR) bands. Besides, the single oscillator E0 and Ed energies are found to be 2.03 and 3.28 eV, respectively, using the Wemple and DiDomenico (WDD) model. Electrical measurements of SnS thin films deposited onto Indium Tin Oxide (ITO) substrate are accomplished and current-voltage (I–V) characteristics of SnO2 / SnS/ITO, are shaped in dark and room temperature conditions. Photovoltaic parameters like open circuit voltage (Voc), short circuit current (Isc), fill factor (FF) and power conversion efficiency (η) values are determined and SnO2 / SnS/ITO junction records the highest values.
Açıklama
Anahtar Kelimeler
Junction, Nanostructures, SnS chalcogenide thin film, Spray pyrolysis, Transmittance, X-ray analysis
Kaynak
Periodica Polytechnica Chemical Engineering
WoS Q Değeri
Q3
Scopus Q Değeri
Q2
Cilt
68
Sayı
3
Künye
Benhaliliba, M., Ayeshamariam, A. ve Ocak, Y. S. (2024). The nanostructure based SnS chalcogenide semiconductor: A detailed investigation of physical and electrical properties. Periodica Polytechnica Chemical Engineering, 68(3), 326-337.
