Electrical and interface state density properties of the 4H-nSiC/[6,6]-phenyl C61-butyric acid methyl ester/Au diode

Basit Öğe Kaydı
dc.contributor.authorAydin, M. E.
dc.contributor.authorYakuphanoglu, Fahrettin
dc.date.accessioned2024-04-24T16:15:28Z
dc.date.available2024-04-24T16:15:28Z
dc.date.issued2008
dc.departmentDicle Üniversitesien_US
dc.description.abstractThe electrical and interface state density properties of the Ni/4H-nSiC/PCBM/Au diode have been investigated by current-voltage, capacitance-voltage and conductance-frequency methods. The ideality factor, barrier height and series resistance values of the diode were found to be 2.28, 1.10eV and 3.76 x 10(4) Omega, respectively. The diode shows a non-ideal I-V behaviour with an ideality factor greater than unity that could be ascribed to the interfacial layer, interface states and series resistance. The obtained barrier height (1.10 eV) of the Ni/4H-nSiC/PCBM/Au diode is lower than that of Ni/4H-nSiC diode (1.32 eV). This indicates that the PCBM organic layer induces a change of 160 meV in the barrier height of the Ni/4H-nSiC diode. The interface state density of the diode was determined from G(p)/omega-f plots and was of order of 5.61 x 10(12) eV(-1) cm(-2). (C) 2008 Elsevier B.V. All rights reserved.en_US
dc.description.sponsorshipTurkish Scientific and Technological Research Council of TURKEY (TUBITAK) [105T137]en_US
dc.description.sponsorshipThis work was Supported by the Turkish Scientific and Technological Research Council of TURKEY (TUBITAK) (Project No. 105T137). Author is thankful to The Scientific and Technological Research Council of Turkey.en_US
dc.identifier.doi10.1016/j.mee.2008.05.031
dc.identifier.endpage1841en_US
dc.identifier.issn0167-9317
dc.identifier.issn1873-5568
dc.identifier.issue8en_US
dc.identifier.scopus2-s2.0-48949115312
dc.identifier.scopusqualityQ2
dc.identifier.startpage1836en_US
dc.identifier.urihttps://doi.org/10.1016/j.mee.2008.05.031
dc.identifier.urihttps://hdl.handle.net/11468/15813
dc.identifier.volume85en_US
dc.identifier.wosWOS:000258714000031
dc.identifier.wosqualityQ2
dc.indekslendigikaynakWeb of Science
dc.indekslendigikaynakScopus
dc.language.isoenen_US
dc.publisherElsevieren_US
dc.relation.ispartofMicroelectronic Engineering
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanıen_US
dc.rightsinfo:eu-repo/semantics/closedAccessen_US
dc.subjectSic Diodeen_US
dc.subjectOrganic Layeren_US
dc.subjectInterfacial State Densityen_US
dc.titleElectrical and interface state density properties of the 4H-nSiC/[6,6]-phenyl C61-butyric acid methyl ester/Au diodeen_US
dc.titleElectrical and interface state density properties of the 4H-nSiC/[6,6]-phenyl C61-butyric acid methyl ester/Au diode
dc.typeArticleen_US

Dosyalar

Koleksiyon

WoS İndeksli Yayınlar Koleksiyonu
Scopus İndeksli Yayınlar Koleksiyonu