Electrical and interface state density properties of the 4H-nSiC/[6,6]-phenyl C61-butyric acid methyl ester/Au diode
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Tarih
2008
Yazarlar
Dergi Başlığı
Dergi ISSN
Cilt Başlığı
Yayıncı
Elsevier
Erişim Hakkı
info:eu-repo/semantics/closedAccess
Özet
The electrical and interface state density properties of the Ni/4H-nSiC/PCBM/Au diode have been investigated by current-voltage, capacitance-voltage and conductance-frequency methods. The ideality factor, barrier height and series resistance values of the diode were found to be 2.28, 1.10eV and 3.76 x 10(4) Omega, respectively. The diode shows a non-ideal I-V behaviour with an ideality factor greater than unity that could be ascribed to the interfacial layer, interface states and series resistance. The obtained barrier height (1.10 eV) of the Ni/4H-nSiC/PCBM/Au diode is lower than that of Ni/4H-nSiC diode (1.32 eV). This indicates that the PCBM organic layer induces a change of 160 meV in the barrier height of the Ni/4H-nSiC diode. The interface state density of the diode was determined from G(p)/omega-f plots and was of order of 5.61 x 10(12) eV(-1) cm(-2). (C) 2008 Elsevier B.V. All rights reserved.
Açıklama
Anahtar Kelimeler
Sic Diode, Organic Layer, Interfacial State Density
Kaynak
Microelectronic Engineering
WoS Q Değeri
Q2
Scopus Q Değeri
Q2
Cilt
85
Sayı
8
