The calculation of electronic parameters of an Al/Methyl red/p-si Schottky diode

dc.contributor.authorKilicoglu, T.
dc.contributor.authorOcak, Yusuf S.
dc.date.accessioned2024-04-24T17:38:15Z
dc.date.available2024-04-24T17:38:15Z
dc.date.issued2007
dc.departmentDicle Üniversitesien_US
dc.description6th International Conference of the Balkan-Physical-Union -- AUG 22-26, 2006 -- Istanbul, TURKEYen_US
dc.description.abstractThe Al/methyl red/p-Si Schottky barrier diode has been fabricated by adding a solution of the non-polymeric organic compound methyl red in chloroform on top of p-Si substrate, and then evaporating the solvent. The methyl red/p-Si contact shows rectifying behaviour and the reverse curve exhibits weak bias voltage dependence. Electronic parameters of Al/methyl red/p-Si Schottky barrier diode were calculated by using current-voltage (I-V) curve and interface state density distribution properties were obtained by using capacitance method. The interface state density has an exponential rise with bias from the mid-gap towards the top of the valance band.en_US
dc.description.sponsorshipBalkan Phys Union,Turkish Phys Soc,Istanbul Univ,Yildiz Tech Univ,Bogaz Univ,Dogus Univ,European Phys Soc,Govt Istanbul,Istanbul Metropolitan Municipal,Turkish Atomic Energy Author,Sci & Technol Res Council Turkey,United Natl Educ Sci & Cultutal Org,NEL Electroniken_US
dc.identifier.endpage+en_US
dc.identifier.isbn978-0-7354-0404-5
dc.identifier.issn0094-243X
dc.identifier.scopus2-s2.0-34547417593
dc.identifier.scopusqualityQ4
dc.identifier.startpage261en_US
dc.identifier.urihttps://hdl.handle.net/11468/21382
dc.identifier.volume899en_US
dc.identifier.wosWOS:000246647900109
dc.identifier.wosqualityN/A
dc.indekslendigikaynakWeb of Science
dc.indekslendigikaynakScopus
dc.language.isoenen_US
dc.publisherAmer Inst Physicsen_US
dc.relation.ispartofSix International Conference of The Balkan Physical Union
dc.relation.publicationcategoryKonferans Öğesi - Uluslararası - Kurum Öğretim Elemanıen_US
dc.rightsinfo:eu-repo/semantics/closedAccessen_US
dc.subjectSchottky Diodesen_US
dc.subjectOrganic-Inorganic Semiconductor Contacten_US
dc.subjectMethyl Reden_US
dc.titleThe calculation of electronic parameters of an Al/Methyl red/p-si Schottky diodeen_US
dc.titleThe calculation of electronic parameters of an Al/Methyl red/p-si Schottky diode
dc.typeConference Objecten_US

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