Enhanced opto-electronic properties of Bi:CuO/n-Si heterojunctions for photodetector applications

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dc.authorid0000-0003-3046-6138en_US
dc.authorid0000-0002-8122-6671en_US
dc.authorid0000-0002-7546-4243en_US
dc.contributor.authorSütçü, G.
dc.contributor.authorYi̇ği̇t Gezgi̇n, Serap
dc.contributor.authorBaturay, Şilan
dc.contributor.authorKılıç, Hamdi Şükür
dc.date.accessioned2024-04-18T11:52:01Z
dc.date.available2024-04-18T11:52:01Z
dc.date.issued2024en_US
dc.departmentDicle Üniversitesi, Fen Bilimleri Enstitüsü, Fizik Ana Bilim Dalıen_US
dc.description.abstractAn effective photodetector based on a family of p-type semiconductors with unique properties is still required by current trends in optoelectronics. The purpose of this study is to enhance the performance of p-type copper oxide films by doping them with bismuth. The pure copper oxide films were successfully fabricated with 1, 2, and 3 wt% of Bi by the spin coating method in an air atmosphere. Advanced techniques were used to describe the fabricated non-doped and Bi-doped CuO films to understand their structural, topological, and optical characteristics. X-ray diffraction patterns of non-doped and Bi-doped CuO films have demonstrated that they have polycrystalline structures, with a preference for growth in both (−111) and (200) orientations. Copper oxide film with 2% Bi doping exhibited the most uniform particle size distribution compared to others. While 3% Bi-doped CuO thin film exhibits the highest photon absorption, 2% Bi-doped CuO thin film transmits more photons. The direct band gaps of the non-doped and Bi-doped CuO samples were found between 1.77 and 1.94 eV. Copper oxide thin film with 2% Bi has the lowest refractive index. While the 2% Bi-doped CuO heterojunction photodetector shows the highest photosensitivity, responsivity, and detectivity, its rise and time are the lowest. Since 2% Bi-doped CuO film has a good crystal structure, large crystalline size, low particle boundary numbers, and a more homogeneous particle size distribution, the number of traps and defects in this thin film is low, and the recombination of charge carriers is limited. Thus, this thin-film-based heterojunction exhibited the best photodetector property, and the results of this work give a way to create effective photodetectors and adjust their performance over a broad range.en_US
dc.identifier.citationSütçü, G., Gezgin, S. Y., Baturay, Ş. ve Kılıç, H. Ş. (2024). Enhanced opto-electronic properties of Bi:CuO/n-Si heterojunctions for photodetector applications. Acta Physica Polonica A, 145(1), 3-15.en_US
dc.identifier.doi10.12693/APhysPolA.145.3
dc.identifier.endpage15en_US
dc.identifier.issn0587-4246
dc.identifier.issue1en_US
dc.identifier.scopus2-s2.0-85185224595
dc.identifier.scopusqualityQ3
dc.identifier.startpage3en_US
dc.identifier.urihttp://appol.ifpan.edu.pl/index.php/appa/article/view/145_3/145_3
dc.identifier.urihttps://hdl.handle.net/11468/13916
dc.identifier.volume145en_US
dc.identifier.wosWOS:001179645100004
dc.identifier.wosqualityN/A
dc.indekslendigikaynakWeb of Science
dc.indekslendigikaynakScopus
dc.institutionauthorSütçü, G.
dc.institutionauthorBaturay, Şilan
dc.language.isoenen_US
dc.publisherPolska Akademia Nauken_US
dc.relation.ispartofActa Physica Polonica A
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanıen_US
dc.rightsinfo:eu-repo/semantics/openAccessen_US
dc.subjectPhotodetectoren_US
dc.subjectRise timeen_US
dc.subjectSpin coatingen_US
dc.subjectBi-doped CuOen_US
dc.titleEnhanced opto-electronic properties of Bi:CuO/n-Si heterojunctions for photodetector applicationsen_US
dc.titleEnhanced opto-electronic properties of Bi:CuO/n-Si heterojunctions for photodetector applications
dc.typeArticleen_US

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