Low- and high-frequency C-V characteristics of the contacts formed by adding a solution of the nonpolymeric organic compound on p-type Si substrate

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dc.contributor.authorEbeoglu, M. A.
dc.contributor.authorKilicoglu, T.
dc.contributor.authorAydin, M. E.
dc.date.accessioned2024-04-24T16:18:16Z
dc.date.available2024-04-24T16:18:16Z
dc.date.issued2007
dc.departmentDicle Üniversitesien_US
dc.description.abstractAl/quercetin/p-Si Schottky barrier diodes (SBDs) have been fabricated by adding a solution of the nonpolymeric organic compound quercetin in ethanol on top of p-Si substrate, and then evaporating the solvent. The quercetin/p-Si contact shows rectifying behaviour and the reverse curve exhibit a weak bias voltage dependence. Barrier height and ideality factor value of 0.86 and 1.06eV, respectively, for the device have been determined from the forward bias current-voltage (I-V)characteristics. The energy distribution of the interface state density located in the semiconductor band gap at quercetin/p-Si interface ranges from 2.12 x 10(12) cm(12) eV(-1) in (0.680-E-v)eV to 4.68 x 10(11) cm(-2) eV(-1) in (0.813-E-v) eV have been determined from the I-Vand the capacitance-voltage (C-V) characteristics (high-and low frequency). The interface state density has an exponential rise with bias from the midgap towards the top of the valence band. (C) 2007 Elsevier B.V. All rights reserved.en_US
dc.identifier.doi10.1016/j.physb.2007.02.063
dc.identifier.endpage97en_US
dc.identifier.issn0921-4526
dc.identifier.issn1873-2135
dc.identifier.issue1-2en_US
dc.identifier.scopus2-s2.0-34247230170en_US
dc.identifier.scopusqualityN/Aen_US
dc.identifier.startpage93en_US
dc.identifier.urihttps://doi.org/10.1016/j.physb.2007.02.063
dc.identifier.urihttps://hdl.handle.net/11468/15940
dc.identifier.volume395en_US
dc.identifier.wosWOS:000246741600016en_US
dc.identifier.wosqualityQ3en_US
dc.indekslendigikaynakWeb of Science
dc.indekslendigikaynakScopus
dc.language.isoenen_US
dc.publisherElsevieren_US
dc.relation.ispartofPhysica B-Condensed Matteren_US
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanıen_US
dc.rightsinfo:eu-repo/semantics/closedAccessen_US
dc.subjectSchottky Diodesen_US
dc.subjectOrganic-Inorganic Semiconductor Contacten_US
dc.subjectQuercetinen_US
dc.titleLow- and high-frequency C-V characteristics of the contacts formed by adding a solution of the nonpolymeric organic compound on p-type Si substrateen_US
dc.typeArticleen_US

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