The calculation of electronic parameters of an Ag/chitin/n-Si Schottky barrier diode

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dc.contributor.authorAkkilic, K.
dc.contributor.authorAydin, M. E.
dc.contributor.authorUzun, I.
dc.contributor.authorKilicoglu, T.
dc.date.accessioned2024-04-24T16:18:24Z
dc.date.available2024-04-24T16:18:24Z
dc.date.issued2006
dc.departmentDicle Üniversitesien_US
dc.description.abstractWe have formed polymeric organic compound chitin film on n-Si substrate by adding a solution of polymeric compound chifin in N,N-dimethylacetamide and lithium chloride on top of an n-Si substrate and then evaporating solvent. It has been seen that the chitin/n-Si contact has demonstrated clearly rectifying behavior and the reverse curves exhibit a weak bias voltage dependence by the current-voltage (I-V) curves studied at room temperature. The barrier height and ideality factor values of 0.959 eV and 1.553, respectively, for this structure have been obtained from the forward bias I-V characteristics. Furthermore, the energy distribution of the interface state density located in the semiconductor band gap at the chitin/n-Si substrate in the energy range from (E-c-0.897) to (E-c-0.574) eV have been determined from the I-V characteristics. The interface state density, N-55, ranges from 5.965 x 10(12) cm(-2) eV(-1) in (E-c-0.897) eV to 1.706 x 10(13) cm(-2) eV(-1) in (E-c-0.574) eV and has an exponential rise with bias this energy range. (c) 2006 Elsevier B.V. All rights reserved.en_US
dc.identifier.doi10.1016/j.synthmet.2006.06.012
dc.identifier.endpage962en_US
dc.identifier.issn0379-6779
dc.identifier.issue14-15en_US
dc.identifier.scopus2-s2.0-33747806636
dc.identifier.scopusqualityQ1
dc.identifier.startpage958en_US
dc.identifier.urihttps://doi.org/10.1016/j.synthmet.2006.06.012
dc.identifier.urihttps://hdl.handle.net/11468/16064
dc.identifier.volume156en_US
dc.identifier.wosWOS:000240767100012
dc.identifier.wosqualityQ1
dc.indekslendigikaynakWeb of Science
dc.indekslendigikaynakScopus
dc.language.isoenen_US
dc.publisherElsevier Science Saen_US
dc.relation.ispartofSynthetic Metals
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanıen_US
dc.rightsinfo:eu-repo/semantics/closedAccessen_US
dc.subjectSchottky Barriersen_US
dc.subjectSchottky Diodesen_US
dc.subjectPolymeric Organic-Inorganic Semiconductor Contacten_US
dc.subjectChitinen_US
dc.titleThe calculation of electronic parameters of an Ag/chitin/n-Si Schottky barrier diodeen_US
dc.titleThe calculation of electronic parameters of an Ag/chitin/n-Si Schottky barrier diode
dc.typeArticleen_US

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