Electrical and optical properties of Cu2ZnSnS4 grown by a thermal co-evaporation method and its diode application

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dc.contributor.authorTombak, Ahmet
dc.contributor.authorOcak, Yusuf Selim
dc.contributor.authorGenisel, Mustafa Fatih
dc.contributor.authorKilicoglu, Tahsin
dc.date.accessioned2024-04-24T16:15:41Z
dc.date.available2024-04-24T16:15:41Z
dc.date.issued2014
dc.departmentDicle Üniversitesien_US
dc.descriptionInternational Semiconductor Science and Technology Conference (ISSTC) -- JAN 13-15, 2014 -- Istanbul, TURKEYen_US
dc.description.abstractCu2ZnSnS4 (CZTS) is low cost and constitutes non-toxic materials abundant in the earth crust. Environment friendly solar cell absorber layers were fabricated by a thermal co-evaporation technique. Elemental composition of the film was stated by energy dispersive spectroscopy (EDS). Some optical and electrical properties such as absorption of light, absorption coefficient, optical band gap charge carrier density, sheet resistance and mobility were extracted. Optical band gap was found to be as 144 eV, besides, charge carrier density, resistivity and mobility were found as 2.14 x 10(19) cm(-3), 8.41 x 10(-4) Omega cm and 3.45 x 10(2) cm(2) V-1 s(-1), respectively. In this study Ag/CZTS/n-Si Schottky diode was fabricated and basic diode parameters including barrier height, ideality factor, and series resistance were concluded using current-voltage and capacitance-voltage measurements. Barrier height and ideality factor values were found from the measurements as 0.81 eV and 4.76, respectively, for Ag/CZTS/n-Si contact. (C) 2014 Elsevier Ltd. All rights reserved.en_US
dc.identifier.doi10.1016/j.mssp.2014.07.006
dc.identifier.endpage102en_US
dc.identifier.issn1369-8001
dc.identifier.issn1873-4081
dc.identifier.scopus2-s2.0-84911391586
dc.identifier.scopusqualityQ1
dc.identifier.startpage98en_US
dc.identifier.urihttps://doi.org/10.1016/j.mssp.2014.07.006
dc.identifier.urihttps://hdl.handle.net/11468/15894
dc.identifier.volume28en_US
dc.identifier.wosWOS:000345645000018
dc.identifier.wosqualityQ2
dc.indekslendigikaynakWeb of Science
dc.indekslendigikaynakScopus
dc.language.isoenen_US
dc.publisherElsevier Sci Ltden_US
dc.relation.ispartofMaterials Science in Semiconductor Processing
dc.relation.publicationcategoryKonferans Öğesi - Uluslararası - Kurum Öğretim Elemanıen_US
dc.rightsinfo:eu-repo/semantics/closedAccessen_US
dc.subjectCu2znsns4en_US
dc.subjectOptical Propertiesen_US
dc.subjectSchottky Diodeen_US
dc.subjectCo-Evaporationen_US
dc.subjectSulfurizationen_US
dc.titleElectrical and optical properties of Cu2ZnSnS4 grown by a thermal co-evaporation method and its diode applicationen_US
dc.titleElectrical and optical properties of Cu2ZnSnS4 grown by a thermal co-evaporation method and its diode application
dc.typeConference Objecten_US

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