Electrical and optical properties of Cu2ZnSnS4 grown by a thermal co-evaporation method and its diode application
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Tarih
2014
Dergi Başlığı
Dergi ISSN
Cilt Başlığı
Yayıncı
Elsevier Sci Ltd
Erişim Hakkı
info:eu-repo/semantics/closedAccess
Özet
Cu2ZnSnS4 (CZTS) is low cost and constitutes non-toxic materials abundant in the earth crust. Environment friendly solar cell absorber layers were fabricated by a thermal co-evaporation technique. Elemental composition of the film was stated by energy dispersive spectroscopy (EDS). Some optical and electrical properties such as absorption of light, absorption coefficient, optical band gap charge carrier density, sheet resistance and mobility were extracted. Optical band gap was found to be as 144 eV, besides, charge carrier density, resistivity and mobility were found as 2.14 x 10(19) cm(-3), 8.41 x 10(-4) Omega cm and 3.45 x 10(2) cm(2) V-1 s(-1), respectively. In this study Ag/CZTS/n-Si Schottky diode was fabricated and basic diode parameters including barrier height, ideality factor, and series resistance were concluded using current-voltage and capacitance-voltage measurements. Barrier height and ideality factor values were found from the measurements as 0.81 eV and 4.76, respectively, for Ag/CZTS/n-Si contact. (C) 2014 Elsevier Ltd. All rights reserved.
Açıklama
International Semiconductor Science and Technology Conference (ISSTC) -- JAN 13-15, 2014 -- Istanbul, TURKEY
Anahtar Kelimeler
Cu2znsns4, Optical Properties, Schottky Diode, Co-Evaporation, Sulfurization
Kaynak
Materials Science in Semiconductor Processing
WoS Q Değeri
Q2
Scopus Q Değeri
Q1
Cilt
28
