The influence of Ge substitution and H2S annealing on Cu2ZnSnS4 thin films

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dc.authorid0000-0003-4771-816Xen_US
dc.authorid0000-0001-8754-1720en_US
dc.authorid0000-0003-2171-8479en_US
dc.contributor.authorAva, Canan Aytuğ
dc.contributor.authorOcak, Yusuf Selim
dc.contributor.authorAsubay, Sezai
dc.contributor.authorÇelik, Ömer
dc.date.accessioned2021-10-14T07:43:11Z
dc.date.available2021-10-14T07:43:11Z
dc.date.issued2021en_US
dc.departmentDicle Üniversitesi, Fen Bilimleri Enstitüsü, Fizik Ana Bilim Dalıen_US
dc.descriptionWOS:000701596600003
dc.description.abstractCu2Zn(Sn1-xGex)S-4 thin films (where x = 0, 0.25, 0.50, 0.75, and 1) were deposited by spin coating technique and annealed under 30 and 40 ccm H2S:Ar (1:9) flows to understand the influence of Ge atom content ratio and H2S flow rate during the annealing of thin films on morphological, structural and optical properties of Cu2Zn(Sn1- x Ge-x)S-4 thin films. It was seen that the Ge content has a strong influence on the structural and optical properties of the films. The crystal size of the films decreased sharply for Cu2Zn(Sn0.75Ge0.25)S-4 thin film and started to increase slowly owing to the formation of high dislocation density and strain in the structures. The Raman spectra show the formation of kesterite thin films and blue Raman shift with Ge substitution to the content. The films obtained under 40 ccm H2S:Ar (1:9) flows have weak secondary peaks associated with ZnS formation. The UV-Vis data showed the increase of optical bandgap from 1.52 to 2.05 eV with a rise in Ge ratio in the structures.en_US
dc.identifier.citationAva, C.A., Ocak, Y.S., Asubay, S. ve Çelik, Ö. (2021). The influence of Ge substitution and H2S annealing on Cu2ZnSnS4 thin films. Optical Materials, 121.en_US
dc.identifier.doi10.1016/j.optmat.2021.111565
dc.identifier.issn1873-1252
dc.identifier.issn0925-3467
dc.identifier.scopus2-s2.0-85115780809
dc.identifier.scopusqualityQ1
dc.identifier.urihttps://hdl.handle.net/11468/7897
dc.identifier.volume121en_US
dc.identifier.wosWOS:000701596600003
dc.identifier.wosqualityQ2
dc.indekslendigikaynakWeb of Science
dc.indekslendigikaynakScopus
dc.institutionauthorAva, Canan Aytuğ
dc.institutionauthorOcak, Yusuf Selim
dc.institutionauthorAsubay, Sezai
dc.institutionauthorÇelik, Ömer
dc.language.isoenen_US
dc.publisherElsevieren_US
dc.relation.ispartofOptical Materials
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanıen_US
dc.rightsinfo:eu-repo/semantics/closedAccessen_US
dc.subjectCZTSen_US
dc.subjectGe substitutionen_US
dc.subjectAnnealing conditionen_US
dc.subjectStructural propertiesen_US
dc.subjectOptical propertiesen_US
dc.titleThe influence of Ge substitution and H2S annealing on Cu2ZnSnS4 thin filmsen_US
dc.titleThe influence of Ge substitution and H2S annealing on Cu2ZnSnS4 thin films
dc.typeArticleen_US

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