Linear correlation between barrier heights and ideality factors of Sn/n-Si schottky diodes with and without the interfacial native oxide layer

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dc.contributor.authorAkkiliç, K
dc.contributor.authorKiliçoglu, T
dc.contributor.authorTürüt, A
dc.date.accessioned2024-04-24T16:18:54Z
dc.date.available2024-04-24T16:18:54Z
dc.date.issued2003
dc.departmentDicle Üniversitesien_US
dc.description.abstractWe have prepared the Sn/n-Si Schottky barrier diodes (SBDs) with and without the native oxide layer. The diodes with or without the native oxide layer have been identically fabricated on the same Si wafer. The effective Schottky barrier heights (SBHs) and ideality factors of the SBDs have been obtained from the current-voltage (I-P) characteristics. Our purpose is experimentally to show whether or not the effective SBHs and ideality factors of the identically fabricated diodes differ from diode to diode. The SBH Phi(b) for the Sn/n-Si SBI)s without the interfacial oxide layer (the reference sample) has ranged from 0.670 to 0.599 eV, and ideality factor n from 1.349 to 2.558. Phi(b) value for the Sn/n-Si SBDs with the interfacial oxide layer (metal interfacial layer-semiconductor (MIS) sample) has ranged from 0.647 to 0.560eV, and ideality factor n value from 1.381 to 2.777. Among identically prepared diodes, higher ideality factors have been found to accompany lower SBHs. Furthermore, the extrapolations of the linear plot the experimental barrier heights (BHs) versus ideality factors to the ideality factor have given the laterally homogeneous BHs of approximately 0.683 and 0.656eV for the reference and MIS Sn/n-Si SBDs. (C) 2003 Elsevier B.V. All rights reserved.en_US
dc.identifier.doi10.1016/S0921-4526(03)00431-9
dc.identifier.endpage393en_US
dc.identifier.issn0921-4526
dc.identifier.issn1873-2135
dc.identifier.issue1-4en_US
dc.identifier.scopus2-s2.0-0041826783
dc.identifier.scopusqualityQ2
dc.identifier.startpage388en_US
dc.identifier.urihttps://doi.org/10.1016/S0921-4526(03)00431-9
dc.identifier.urihttps://hdl.handle.net/11468/16325
dc.identifier.volume337en_US
dc.identifier.wosWOS:000185267800050
dc.identifier.wosqualityQ3
dc.indekslendigikaynakWeb of Science
dc.indekslendigikaynakScopus
dc.language.isoenen_US
dc.publisherElsevieren_US
dc.relation.ispartofPhysica B-Condensed Matter
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanıen_US
dc.rightsinfo:eu-repo/semantics/closedAccessen_US
dc.subjectSchottky Barrieren_US
dc.subjectMetal-Semiconductor Contacten_US
dc.subjectThe Interfacial Layeren_US
dc.subjectBarrier Inhomogeneityen_US
dc.titleLinear correlation between barrier heights and ideality factors of Sn/n-Si schottky diodes with and without the interfacial native oxide layeren_US
dc.titleLinear correlation between barrier heights and ideality factors of Sn/n-Si schottky diodes with and without the interfacial native oxide layer
dc.typeArticleen_US

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