Effect of an organic compound (Methyl Red) interfacial layer on the calculation of characteristic parameters of an Al/Methyl Red/p-Si sandwich Schottky barrier diode

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dc.contributor.authorKilicoglu, Tahsin
dc.date.accessioned2024-04-24T16:18:32Z
dc.date.available2024-04-24T16:18:32Z
dc.date.issued2008
dc.departmentDicle Üniversitesien_US
dc.description.abstractAn Al/Methyl Red/p-Si sandwich Schottky barrier diode (SBD) has been fabricated by adding a solution of the organic compound Methyl Red in chloroform onto a p-Si substrate, and then evaporating the solvent. Current-voltage (I-V) measurements of the Al/Methyl Red/p-Si sandwich SBD have been carried out at room temperature and in the dark. The Al/Methyl Red/p-Si sandwich SBD demonstrated rectifying behavior. Barrier height (BH) and ideality factor values of 0.855 eV and 1.19, respectively, for this device have been determined from the forward-bias I-V characteristics. The Al/Methyl Red/p-Si sandwich SBD showed non-ideal I-V behavior with the value of ideality factor greater than unity. The energy distribution of the interface state density determined from I-V characteristics increases exponentially with bias from 3.68 x 10(12) cm(-2) eV(-1) at (0.81-E-v) eV to 9.99 x 10(13) cm(-2) eV(-1) at (0.69-E-v) eV. (C) 2007 Elsevier B.V. All rights reserved.en_US
dc.identifier.doi10.1016/j.tsf.2007.06.022
dc.identifier.endpage970en_US
dc.identifier.issn0040-6090
dc.identifier.issue6en_US
dc.identifier.scopus2-s2.0-37349024798
dc.identifier.scopusqualityQ2
dc.identifier.startpage967en_US
dc.identifier.urihttps://doi.org/10.1016/j.tsf.2007.06.022
dc.identifier.urihttps://hdl.handle.net/11468/16160
dc.identifier.volume516en_US
dc.identifier.wosWOS:000252980400015
dc.identifier.wosqualityQ1
dc.indekslendigikaynakWeb of Science
dc.indekslendigikaynakScopus
dc.language.isoenen_US
dc.publisherElsevier Science Saen_US
dc.relation.ispartofThin Solid Films
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanıen_US
dc.rightsinfo:eu-repo/semantics/closedAccessen_US
dc.subjectSchottky Diodesen_US
dc.subjectOrganic-Inorganic Semiconductor Contacten_US
dc.subjectMethyl Reden_US
dc.titleEffect of an organic compound (Methyl Red) interfacial layer on the calculation of characteristic parameters of an Al/Methyl Red/p-Si sandwich Schottky barrier diodeen_US
dc.titleEffect of an organic compound (Methyl Red) interfacial layer on the calculation of characteristic parameters of an Al/Methyl Red/p-Si sandwich Schottky barrier diode
dc.typeArticleen_US

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