Effect of an organic compound (Methyl Red) interfacial layer on the calculation of characteristic parameters of an Al/Methyl Red/p-Si sandwich Schottky barrier diode
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Tarih
2008
Yazarlar
Dergi Başlığı
Dergi ISSN
Cilt Başlığı
Yayıncı
Elsevier Science Sa
Erişim Hakkı
info:eu-repo/semantics/closedAccess
Özet
An Al/Methyl Red/p-Si sandwich Schottky barrier diode (SBD) has been fabricated by adding a solution of the organic compound Methyl Red in chloroform onto a p-Si substrate, and then evaporating the solvent. Current-voltage (I-V) measurements of the Al/Methyl Red/p-Si sandwich SBD have been carried out at room temperature and in the dark. The Al/Methyl Red/p-Si sandwich SBD demonstrated rectifying behavior. Barrier height (BH) and ideality factor values of 0.855 eV and 1.19, respectively, for this device have been determined from the forward-bias I-V characteristics. The Al/Methyl Red/p-Si sandwich SBD showed non-ideal I-V behavior with the value of ideality factor greater than unity. The energy distribution of the interface state density determined from I-V characteristics increases exponentially with bias from 3.68 x 10(12) cm(-2) eV(-1) at (0.81-E-v) eV to 9.99 x 10(13) cm(-2) eV(-1) at (0.69-E-v) eV. (C) 2007 Elsevier B.V. All rights reserved.
Açıklama
Anahtar Kelimeler
Schottky Diodes, Organic-Inorganic Semiconductor Contact, Methyl Red
Kaynak
Thin Solid Films
WoS Q Değeri
Q1
Scopus Q Değeri
Q2
Cilt
516
Sayı
6
