Substrate temperature effects on reactively sputtered Cr2O3/n-Si heterojunctions

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dc.contributor.authorOcak, Yusuf Selim
dc.contributor.authorIssa, Ali Ahmed
dc.contributor.authorGenisel, Mustafa Fatih
dc.contributor.authorTombak, Ahmet
dc.contributor.authorKilicoglu, Tahsin
dc.date.accessioned2024-04-24T17:07:59Z
dc.date.available2024-04-24T17:07:59Z
dc.date.issued2016
dc.departmentDicle Üniversitesien_US
dc.descriptionInternational Physics Conference at the Anatolian Peak (IPCAP) -- FEB 25-27, 2016 -- Ataturk Univ, Nenehatun Cultural Ctr, Erzurum, TURKEYen_US
dc.description.abstractTo see the effects of substrate temperature on Cr2O3/n-Si heterojunctions, Cr2O3 thin films were formed on n-Si and glass substrates at 40, 150 and 250 degrees C by radio frequency (RF) reactive sputtering technique. High purity Cr was used as target and oxygen was used as reactive gas. Optical properties of Cr2O3/n-Si thin films were analyzed using UV-vis data. The band gaps of the films were compared. The electrical properties of Cr2O3/n-Si heterojunction were tested by their current voltage (I-V) measurements in dark. It was observed that the heterojunction which was fabricated by forming Cr2O3 thin film at 250 degrees C gave better rectification. The characteristic electrical parameters such as barrier height, ideality factor and series resistance were calculated by using its I-V data. The influence of light intensity on photovoltaic effect behavior of the device was also calculated, finally the barrier height value of the structure obtained from capacitance-voltage (C-V) data were compared with the one calculated from I-V measurements.en_US
dc.description.sponsorshipAtaturk Univ, Phys Depten_US
dc.identifier.doi10.1088/1742-6596/707/1/012026
dc.identifier.issn1742-6588
dc.identifier.issn1742-6596
dc.identifier.scopus2-s2.0-84977266924
dc.identifier.scopusqualityQ3
dc.identifier.urihttps://doi.org/10.1088/1742-6596/707/1/012026
dc.identifier.urihttps://hdl.handle.net/11468/17142
dc.identifier.volume707en_US
dc.identifier.wosWOS:000561775700025
dc.identifier.wosqualityN/A
dc.indekslendigikaynakWeb of Science
dc.indekslendigikaynakScopus
dc.language.isoenen_US
dc.publisherIop Publishing Ltden_US
dc.relation.ispartofInternational Physics Conference At The Anatolian Peak (Ipcap2016)
dc.relation.publicationcategoryKonferans Öğesi - Uluslararası - Kurum Öğretim Elemanıen_US
dc.rightsinfo:eu-repo/semantics/openAccessen_US
dc.subject[No Keyword]en_US
dc.titleSubstrate temperature effects on reactively sputtered Cr2O3/n-Si heterojunctionsen_US
dc.titleSubstrate temperature effects on reactively sputtered Cr2O3/n-Si heterojunctions
dc.typeConference Objecten_US

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