Substrate temperature effects on reactively sputtered Cr2O3/n-Si heterojunctions
[ X ]
Tarih
2016
Dergi Başlığı
Dergi ISSN
Cilt Başlığı
Yayıncı
Iop Publishing Ltd
Erişim Hakkı
info:eu-repo/semantics/openAccess
Özet
To see the effects of substrate temperature on Cr2O3/n-Si heterojunctions, Cr2O3 thin films were formed on n-Si and glass substrates at 40, 150 and 250 degrees C by radio frequency (RF) reactive sputtering technique. High purity Cr was used as target and oxygen was used as reactive gas. Optical properties of Cr2O3/n-Si thin films were analyzed using UV-vis data. The band gaps of the films were compared. The electrical properties of Cr2O3/n-Si heterojunction were tested by their current voltage (I-V) measurements in dark. It was observed that the heterojunction which was fabricated by forming Cr2O3 thin film at 250 degrees C gave better rectification. The characteristic electrical parameters such as barrier height, ideality factor and series resistance were calculated by using its I-V data. The influence of light intensity on photovoltaic effect behavior of the device was also calculated, finally the barrier height value of the structure obtained from capacitance-voltage (C-V) data were compared with the one calculated from I-V measurements.
Açıklama
International Physics Conference at the Anatolian Peak (IPCAP) -- FEB 25-27, 2016 -- Ataturk Univ, Nenehatun Cultural Ctr, Erzurum, TURKEY
Anahtar Kelimeler
[No Keyword]
Kaynak
International Physics Conference At The Anatolian Peak (Ipcap2016)
WoS Q Değeri
N/A
Scopus Q Değeri
Q3
Cilt
707
