Correlation between barrier heights and ideality factors of Cd/n-Si and Cd/p-Si Schottky barrier diodes

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dc.contributor.authorAkkiliç, K
dc.contributor.authorTürüt, A
dc.contributor.authorÇankaya, G
dc.contributor.authorKiliçoglu, T
dc.date.accessioned2024-04-24T16:18:42Z
dc.date.available2024-04-24T16:18:42Z
dc.date.issued2003
dc.departmentDicle Üniversitesien_US
dc.description.abstractOur goal is to experimentally investigate whether or not the effective Schottky barrier heights (SBHs) and ideality factors obtained from the current-voltage (I-V) and capacitance -voltage (C-V) characteristics differ from diode to diode even if the samples were identically prepared. For this purpose, we prepared Cd/n-Si (33 dots) and Cd/p-Si (15 dots) diodes. The SBH for the Cd/n-Si diodes ranged from 0.701 to 0.605 eV, and ideality factor n from 1.913 to 1.213. Phi(b) value for the Cd/p-Si diodes ranged from 0.688 to 0.730 eV, and ideality factor n value from 1.473 to 1.040. The experimental SBH distributions obtained from the C-2-V and I-V characteristics were fitted by a Gaussian function and their mean SBH values were calculated. Furthermore, the laterally homogeneous barrier heights were also computed from the extrapolation of the linear plot of experimental barrier heights versus ideality factors. (C) 2003 Elsevier Science Ltd. All rights reserved.en_US
dc.identifier.doi10.1016/S0038-1098(02)00829-3
dc.identifier.endpage556en_US
dc.identifier.issn0038-1098
dc.identifier.issn1879-2766
dc.identifier.issue10en_US
dc.identifier.scopus2-s2.0-0037369051
dc.identifier.scopusqualityQ2
dc.identifier.startpage551en_US
dc.identifier.urihttps://doi.org/10.1016/S0038-1098(02)00829-3
dc.identifier.urihttps://hdl.handle.net/11468/16240
dc.identifier.volume125en_US
dc.identifier.wosWOS:000181506900008
dc.identifier.wosqualityQ1
dc.indekslendigikaynakWeb of Science
dc.indekslendigikaynakScopus
dc.language.isoenen_US
dc.publisherPergamon-Elsevier Science Ltden_US
dc.relation.ispartofSolid State Communications
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanıen_US
dc.rightsinfo:eu-repo/semantics/closedAccessen_US
dc.subjectSemiconductorsen_US
dc.subjectSurfaces And Interfacesen_US
dc.subjectThin Filmsen_US
dc.subjectElectronic States (Localized)en_US
dc.titleCorrelation between barrier heights and ideality factors of Cd/n-Si and Cd/p-Si Schottky barrier diodesen_US
dc.titleCorrelation between barrier heights and ideality factors of Cd/n-Si and Cd/p-Si Schottky barrier diodes
dc.typeArticleen_US

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