Correlation between barrier heights and ideality factors of Cd/n-Si and Cd/p-Si Schottky barrier diodes
[ X ]
Tarih
2003
Yazarlar
Dergi Başlığı
Dergi ISSN
Cilt Başlığı
Yayıncı
Pergamon-Elsevier Science Ltd
Erişim Hakkı
info:eu-repo/semantics/closedAccess
Özet
Our goal is to experimentally investigate whether or not the effective Schottky barrier heights (SBHs) and ideality factors obtained from the current-voltage (I-V) and capacitance -voltage (C-V) characteristics differ from diode to diode even if the samples were identically prepared. For this purpose, we prepared Cd/n-Si (33 dots) and Cd/p-Si (15 dots) diodes. The SBH for the Cd/n-Si diodes ranged from 0.701 to 0.605 eV, and ideality factor n from 1.913 to 1.213. Phi(b) value for the Cd/p-Si diodes ranged from 0.688 to 0.730 eV, and ideality factor n value from 1.473 to 1.040. The experimental SBH distributions obtained from the C-2-V and I-V characteristics were fitted by a Gaussian function and their mean SBH values were calculated. Furthermore, the laterally homogeneous barrier heights were also computed from the extrapolation of the linear plot of experimental barrier heights versus ideality factors. (C) 2003 Elsevier Science Ltd. All rights reserved.
Açıklama
Anahtar Kelimeler
Semiconductors, Surfaces And Interfaces, Thin Films, Electronic States (Localized)
Kaynak
Solid State Communications
WoS Q Değeri
Q1
Scopus Q Değeri
Q2
Cilt
125
Sayı
10
