Barrier height enhancement of metal/semiconductor contact by an enzyme biofilm interlayer

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dc.contributor.authorOcak, Yusuf Selim
dc.contributor.authorGuven, Reyhan Gul
dc.contributor.authorTombak, Ahmet
dc.contributor.authorKilicoglu, Tahsin
dc.contributor.authorGuven, Kemal
dc.contributor.authorDogru, Mehmet
dc.date.accessioned2024-04-24T17:07:48Z
dc.date.available2024-04-24T17:07:48Z
dc.date.issued2013
dc.departmentDicle Üniversitesien_US
dc.description.abstractA metal/interlayer/semiconductor (Al/enzyme/p-Si) MIS device was fabricated using -amylase enzyme as a thin biofilm interlayer. It was observed that the device showed an excellent rectifying behavior and the barrier height value of 0.78eV for Al/-amylase/p-Si was meaningfully larger than the one of 0.58eV for conventional Al/p-Si metal/semiconductor (MS) contact. Enhancement of the interfacial potential barrier of Al/p-Si MS diode was realized using enzyme interlayer by influencing the space charge region of Si semiconductor. The electrical properties of the structure were executed by the help of current-voltage and capacitance-voltage measurements. The photovoltaic properties of the structure were executed under a solar simulator with AM1.5 global filter between 40 and 100mW/cm(2) illumination conditions. It was also reported that the -amylase enzyme produced from Bacillus licheniformis had a 3.65eV band gap value obtained from optical method.en_US
dc.description.sponsorshipDicle University Scientific Research Project Office (DUBAP) [10-ZEF-165]en_US
dc.description.sponsorshipThis study has been supported by Dicle University Scientific Research Project Office (DUBAP, 10-ZEF-165).en_US
dc.identifier.doi10.1080/14786435.2013.765985
dc.identifier.endpage2181en_US
dc.identifier.issn1478-6435
dc.identifier.issn1478-6443
dc.identifier.issue17en_US
dc.identifier.scopus2-s2.0-84879691526
dc.identifier.scopusqualityQ3
dc.identifier.startpage2172en_US
dc.identifier.urihttps://doi.org/10.1080/14786435.2013.765985
dc.identifier.urihttps://hdl.handle.net/11468/17002
dc.identifier.volume93en_US
dc.identifier.wosWOS:000320575800006
dc.identifier.wosqualityQ1
dc.indekslendigikaynakWeb of Science
dc.indekslendigikaynakScopus
dc.language.isoenen_US
dc.publisherTaylor & Francis Ltden_US
dc.relation.ispartofPhilosophical Magazine
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanıen_US
dc.rightsinfo:eu-repo/semantics/closedAccessen_US
dc.subject-Amylaseen_US
dc.subjectBarrier Heighten_US
dc.subjectSeries Resistanceen_US
dc.subjectMis Contacten_US
dc.titleBarrier height enhancement of metal/semiconductor contact by an enzyme biofilm interlayeren_US
dc.titleBarrier height enhancement of metal/semiconductor contact by an enzyme biofilm interlayer
dc.typeArticleen_US

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