Electrical properties of an Ag/ZnS/p–Si heterojunction obtained by sputtered ZnS thin film

Basit Öğe Kaydı
dc.authorid0000-0001-8754-1720en_US
dc.authorid0000-0002-7150-6522en_US
dc.contributor.authorBozkaplan, Cihat
dc.contributor.authorOcak, Yusuf Selim
dc.contributor.authorAkkılıç, Kemal
dc.date.accessioned2022-09-12T13:22:48Z
dc.date.available2022-09-12T13:22:48Z
dc.date.issued2021en_US
dc.departmentDicle Üniversitesi, Fen Bilimleri Enstitüsü, Fizik Ana Bilim Dalıen_US
dc.description.abstract<p>ZnS thin films were deposited on both soda-lime glass and p-Si substrates by radio frequency (RF) sputtering of a single ZnS target. The morphological, structural, and optical properties of the films were analyzed. It was seen that the thin films had (111) and (200) orientations of ZnS structure. The particle size distribution of the SEM image showed that the ZnS thin film had a 44.00 +/- 0.56 nm average particle size. The optical band gap of ZnS thin films was calculated as 3.7 eV using UV-vis data. The electrical and photoelectrical properties of an Ag/ZnS/ p-Si heterojunction were analyzed using current-voltage (I-V) and capacitance-voltage (C-V) measurements. The results showed that the device had 0.694 eV barrier height and 449 omega series resistance values. In addition, the photodiode of the device was analyzed by I-V measurements under a solar simulator with AM1.5 global filter. Finally, the barrier height value obtained from C-V measurements was compatible with the I-V method.p>en_US
dc.identifier.citationBozkaplan, C., Ocak, Y.S. ve Akkılıç, K. (2021). Electrical properties of an Ag/ZnS/p–Si heterojunction obtained by sputtered ZnS thin film. Optical Materials, 117, 1-5.en_US
dc.identifier.doi10.1016/j.optmat.2021.111126
dc.identifier.endpage5en_US
dc.identifier.issn0925-3467
dc.identifier.issn1873-1252
dc.identifier.scopus2-s2.0-85105357685
dc.identifier.scopusqualityQ1
dc.identifier.startpage1en_US
dc.identifier.urihttps://www.sciencedirect.com/science/article/pii/S092534672100327X?via%3Dihub
dc.identifier.urihttps://hdl.handle.net/11468/10443
dc.identifier.volume117en_US
dc.identifier.wosWOS:000687261600006
dc.identifier.wosqualityQ2
dc.indekslendigikaynakWeb of Science
dc.indekslendigikaynakScopus
dc.institutionauthorBozkaplan, Cihat
dc.institutionauthorOcak, Yusuf Selim
dc.institutionauthorAkkılıç, Kemal
dc.language.isoenen_US
dc.publisherElsevieren_US
dc.relation.ispartofOptical Materials
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanıen_US
dc.rightsinfo:eu-repo/semantics/closedAccessen_US
dc.subjectZnSen_US
dc.subjectSputter depositionen_US
dc.subjectHeterojunctionen_US
dc.titleElectrical properties of an Ag/ZnS/p–Si heterojunction obtained by sputtered ZnS thin filmen_US
dc.titleElectrical properties of an Ag/ZnS/p–Si heterojunction obtained by sputtered ZnS thin film
dc.typeArticleen_US

Dosyalar

Orijinal paket
Listeleniyor 1 - 1 / 1
[ X ]
İsim:
Electrical properties of an Ag.pdf
Boyut:
3.66 MB
Biçim:
Adobe Portable Document Format
Açıklama:
Makale Dosyası
İndir
Lisans paketi
Listeleniyor 1 - 1 / 1
[ X ]
İsim:
license.txt
Boyut:
1.44 KB
Biçim:
Item-specific license agreed upon to submission
Açıklama:
İndir

Koleksiyon

Fen Bilimleri Enstitüsü Makaleler
Scopus İndeksli Yayınlar Koleksiyonu
WoS İndeksli Yayınlar Koleksiyonu