Electrical and photoelectrical properties of Ag/n-type Si metal/semiconductor contact with organic interlayer

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dc.contributor.authorOzerden, Enise
dc.contributor.authorOcak, Yusuf Selim
dc.contributor.authorTombak, Ahmet
dc.contributor.authorKilicoglu, Tahsin
dc.contributor.authorTurut, Abdulmecit
dc.date.accessioned2024-04-24T16:18:33Z
dc.date.available2024-04-24T16:18:33Z
dc.date.issued2015
dc.departmentDicle Üniversitesien_US
dc.description.abstractElectrical and photoelectrical features of Metal/Organic Interlayer/Inorganic Semiconductor (MIS) Schottky device were investigated by using current-voltage (I-V) and capacitance-voltage (C-V) measurements at room temperature. For this purpose, 9,10-dihydrobenzo[a]pyrene-7(8H)-one (9,10-H2BaP) thin film was used as organic interlayer between Ag metal and n-Si semiconductor. Firstly, optical properties of the organic thin film were determined from optical absorption spectrum, and its optical band gap was found to be 3.73 eV. Then, the electrical parameters of the Ag/9,10-H2BaP/n-Si diode such as ideality factor (n), barrier height (Phi(b(I-V))), diffusion potential (V-d), barrier height (Phi(b(C-V))) and carrier concentration (N-d) were calculated from I-V and C-V characteristics at room temperature. The Fb values obtained from both measurements were compared with each other. Besides, the effect of light on I-V measurements of the structure was examined at illumination intensities ranging from 40 to 100 mW/cm(2) with 20 mW/cm(2) intervals using a solar simulator with AM1.5 filter. Light sensitivity, open circuit voltage (V-OC) and short circuit current (I-SC) parameters of Ag/9,10-H2BaP/n-Si structure were calculated from under light measurements. (C) 2015 Elsevier B.V. All rights reserved.en_US
dc.identifier.doi10.1016/j.tsf.2015.11.013
dc.identifier.endpage18en_US
dc.identifier.issn0040-6090
dc.identifier.scopus2-s2.0-84959503125
dc.identifier.scopusqualityQ2
dc.identifier.startpage14en_US
dc.identifier.urihttps://doi.org/10.1016/j.tsf.2015.11.013
dc.identifier.urihttps://hdl.handle.net/11468/16162
dc.identifier.volume597en_US
dc.identifier.wosWOS:000366647000003
dc.identifier.wosqualityQ2
dc.indekslendigikaynakWeb of Science
dc.indekslendigikaynakScopus
dc.language.isoenen_US
dc.publisherElsevier Science Saen_US
dc.relation.ispartofThin Solid Films
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanıen_US
dc.rightsinfo:eu-repo/semantics/closedAccessen_US
dc.subjectOrganic Interlayeren_US
dc.subjectMetal/Organic Layer/Inorganic Semiconductor Structuresen_US
dc.subjectSchottky Barrier Heighten_US
dc.subjectPhotoelectrical Propertiesen_US
dc.titleElectrical and photoelectrical properties of Ag/n-type Si metal/semiconductor contact with organic interlayeren_US
dc.titleElectrical and photoelectrical properties of Ag/n-type Si metal/semiconductor contact with organic interlayer
dc.typeArticleen_US

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