Electrical and photoelectrical properties of Ag/n-type Si metal/semiconductor contact with organic interlayer
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Tarih
2015
Dergi Başlığı
Dergi ISSN
Cilt Başlığı
Yayıncı
Elsevier Science Sa
Erişim Hakkı
info:eu-repo/semantics/closedAccess
Özet
Electrical and photoelectrical features of Metal/Organic Interlayer/Inorganic Semiconductor (MIS) Schottky device were investigated by using current-voltage (I-V) and capacitance-voltage (C-V) measurements at room temperature. For this purpose, 9,10-dihydrobenzo[a]pyrene-7(8H)-one (9,10-H2BaP) thin film was used as organic interlayer between Ag metal and n-Si semiconductor. Firstly, optical properties of the organic thin film were determined from optical absorption spectrum, and its optical band gap was found to be 3.73 eV. Then, the electrical parameters of the Ag/9,10-H2BaP/n-Si diode such as ideality factor (n), barrier height (Phi(b(I-V))), diffusion potential (V-d), barrier height (Phi(b(C-V))) and carrier concentration (N-d) were calculated from I-V and C-V characteristics at room temperature. The Fb values obtained from both measurements were compared with each other. Besides, the effect of light on I-V measurements of the structure was examined at illumination intensities ranging from 40 to 100 mW/cm(2) with 20 mW/cm(2) intervals using a solar simulator with AM1.5 filter. Light sensitivity, open circuit voltage (V-OC) and short circuit current (I-SC) parameters of Ag/9,10-H2BaP/n-Si structure were calculated from under light measurements. (C) 2015 Elsevier B.V. All rights reserved.
Açıklama
Anahtar Kelimeler
Organic Interlayer, Metal/Organic Layer/Inorganic Semiconductor Structures, Schottky Barrier Height, Photoelectrical Properties
Kaynak
Thin Solid Films
WoS Q Değeri
Q2
Scopus Q Değeri
Q2
Cilt
597
