Investigation of the structural and morphological features of TiO2:8OBA composites for MIS semiconductor diodes

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dc.authorid0000-0003-4771-816Xen_US
dc.authorid0000-0003-0369-7686en_US
dc.authorid0000-0002-3785-6190en_US
dc.contributor.authorGüllü, Ömer
dc.contributor.authorOkumuş, Mustafa
dc.contributor.authorAva, Canan Aytuğ
dc.date.accessioned2024-03-11T12:27:26Z
dc.date.available2024-03-11T12:27:26Z
dc.date.issued2023en_US
dc.departmentDicle Üniversitesien_US
dc.description.abstractIn this study, a liquid crystal 8OBA-doped TiO2 composite was formed on a p-Si substrate using the ultrasonic spray coating method. The characterization of the un-doped and doped films produced was carried out by SEM-EDS, XRD and UV–vis measurements. SEM/EDS analysis showed that the TiO2:8OBA composite completed the formation of a layer on the glass surface and exhibited a homogeneous distribution throughout the surface. XRD analysis of TiO2:8OBA composites showed that anatase and rutile crystal phases are belonging to TiO2 and C[sbnd]H based phase indicating 8OBA. In addition, as a result of UV–vis analysis, the optical band gap of 8OBA:TiO2 composite was calculated as 2.82 eV. Besides, the diode application of 8OBA doped and un-doped TiO2 thin film was performed. Charge transport processes of the diode were studied in detail by taking current–voltage measurements. The ideality factor, barrier height, series resistance and parallel resistance values were extracted using different methods.en_US
dc.identifier.citationGüllü, Ö., Okumuş, M. ve Ava, C. A. (2023). Investigation of the structural and morphological features of TiO2:8OBA composites for MIS semiconductor diodes. Materials Science and Engineering: B, 289, 1-7.en_US
dc.identifier.doi10.1016/j.mseb.2023.116286
dc.identifier.endpage7en_US
dc.identifier.issn0921-5107
dc.identifier.scopus2-s2.0-85146434873
dc.identifier.scopusqualityQ1
dc.identifier.startpage1en_US
dc.identifier.urihttps://www.sciencedirect.com/science/article/pii/S0921510723000284?via%3Dihub
dc.identifier.urihttps://hdl.handle.net/11468/13565
dc.identifier.volume289en_US
dc.identifier.wosWOS:000999477400001
dc.identifier.wosqualityN/A
dc.indekslendigikaynakWeb of Science
dc.indekslendigikaynakScopus
dc.institutionauthorAva, Canan Aytuğ
dc.language.isoenen_US
dc.publisherElsevier Ltden_US
dc.relation.ispartofMaterials Science and Engineering: B
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanıen_US
dc.rightsinfo:eu-repo/semantics/closedAccessen_US
dc.subjectBand gapen_US
dc.subjectLiquid crystalsen_US
dc.subjectMetal oxidesen_US
dc.subjectMIS diodeen_US
dc.subjectSchottky barrieren_US
dc.subjectThin filmen_US
dc.titleInvestigation of the structural and morphological features of TiO2:8OBA composites for MIS semiconductor diodesen_US
dc.titleInvestigation of the structural and morphological features of TiO2:8OBA composites for MIS semiconductor diodes
dc.typeArticleen_US

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