Influences of thermal annealing, the electrolyte pH, and current density on the interface state density distribution of anodic MOS structures

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dc.contributor.authorSaglam, M
dc.contributor.authorTurut, A
dc.contributor.authorNuhoglu, C
dc.contributor.authorEfeoglu, H
dc.contributor.authorKilicoglu, T
dc.contributor.authorEbeoglu, MA
dc.date.accessioned2024-04-24T16:00:07Z
dc.date.available2024-04-24T16:00:07Z
dc.date.issued1997
dc.departmentDicle Üniversitesien_US
dc.description.abstractAn investigation of the effect of thermal annealing and anodization parameters, such as the electrolyte pH and current density, on capacitance-voltage and interface state density distribution characteristics has been made. Al(anodic oxide) SiO2/p-Si MOS structures were prepared: in 0.1 M K2SO4 electrolyte with a pH of 7 (the 0.1 M KOH solution was buffered with H2SO4) at current densities of 3, 5, and 7 mA/cm(2) and with four different pH; values of the electrolyte at 3 mA/cm(2). It is found that thermal annealing a relatively low temperature can be used to improve the anodic MOS characteristics. Moreover, of the pH and current density it followed that the pH has a dominant role in the interface electrical properties. The lowest interface state densities at the maximum and the midgap positions are 7.1 x 10(11) and 2.7 x 10(10) eV(-1) cm(-2) for a sample made with pH = 7, J = 3 mA/cm(2). The characteristics of this sample seem satisfactory for device applications of anodized p-Si.en_US
dc.identifier.doi10.1007/s003390050537
dc.identifier.endpage37en_US
dc.identifier.issn0947-8396
dc.identifier.issue1en_US
dc.identifier.scopus2-s2.0-0031187742
dc.identifier.scopusqualityQ2
dc.identifier.startpage33en_US
dc.identifier.urihttps://doi.org/10.1007/s003390050537
dc.identifier.urihttps://hdl.handle.net/11468/14378
dc.identifier.volume65en_US
dc.identifier.wosWOS:A1997XK89400007
dc.identifier.wosqualityQ2
dc.indekslendigikaynakWeb of Science
dc.indekslendigikaynakScopus
dc.language.isoenen_US
dc.publisherSpringer Verlagen_US
dc.relation.ispartofApplied Physics A-Materials Science & Processing
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanıen_US
dc.rightsinfo:eu-repo/semantics/closedAccessen_US
dc.subject[No Keyword]en_US
dc.titleInfluences of thermal annealing, the electrolyte pH, and current density on the interface state density distribution of anodic MOS structuresen_US
dc.titleInfluences of thermal annealing, the electrolyte pH, and current density on the interface state density distribution of anodic MOS structures
dc.typeArticleen_US

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