Determination of the laterally homogeneous barrier height of metal/p-InP Schottky barrier diodes

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dc.contributor.authorAsubay, S.
dc.contributor.authorGullu, O.
dc.contributor.authorTurut, A.
dc.date.accessioned2024-04-24T16:18:36Z
dc.date.available2024-04-24T16:18:36Z
dc.date.issued2009
dc.departmentDicle Üniversitesien_US
dc.description.abstractWe have reported a study of a number of metal/p-type InP (Cu, Au, Al, Sn, Pb, Ti, Zn) Schottky barrier diodes (SBDs). Each one diode has been identically prepared on p-InP under vacuum conditions with metal deposition. In Schottky diodes, the current transport occurs by thermionic emission over the Schottky barrier. The current-voltage characteristics of Schottky contacts are described by two fitting parameters such as effective barrier height and the ideality factor. Due to lateral inhomogeneities of the barrier height, both characteristic diode parameters differ from one diode to another. We have determined the lateral homogeneous barrier height of the SBDs from the linear relationship between experimental barrier heights and ideality factors that can be explained by lateral inhomogeneity of the barrier height. Furthermore, the barrier heights of metal-semiconductor contacts have been explained by the continuum of metal-induced gap states (MIGS). It has been seen that the laterally homogeneous barrier heights obtained from the experimental data of the metal/p-type InP Schottky contacts quantitatively confirm the predictions of the combination of the physical MIGS and the chemical electronegativity. (C) 2009 Elsevier Ltd. All rights reserved.en_US
dc.identifier.doi10.1016/j.vacuum.2009.06.050
dc.identifier.endpage1474en_US
dc.identifier.issn0042-207X
dc.identifier.issue12en_US
dc.identifier.scopus2-s2.0-67650707896
dc.identifier.scopusqualityQ1
dc.identifier.startpage1470en_US
dc.identifier.urihttps://doi.org/10.1016/j.vacuum.2009.06.050
dc.identifier.urihttps://hdl.handle.net/11468/16194
dc.identifier.volume83en_US
dc.identifier.wosWOS:000269100500013
dc.identifier.wosqualityQ3
dc.indekslendigikaynakWeb of Science
dc.indekslendigikaynakScopus
dc.language.isoenen_US
dc.publisherPergamon-Elsevier Science Ltden_US
dc.relation.ispartofVacuum
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanıen_US
dc.rightsinfo:eu-repo/semantics/closedAccessen_US
dc.subjectInp Semiconductoren_US
dc.subjectSchottky Diodesen_US
dc.subjectMetal-Semiconductor-Metal Contactsen_US
dc.subjectSchottky Barrier Inhomogeneityen_US
dc.titleDetermination of the laterally homogeneous barrier height of metal/p-InP Schottky barrier diodesen_US
dc.titleDetermination of the laterally homogeneous barrier height of metal/p-InP Schottky barrier diodes
dc.typeArticleen_US

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