Review-Gate Oxide Thin Films Based on Silicon Carbide

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dc.contributor.authorOdesanya, Kazeem Olabisi
dc.contributor.authorAhmad, Roslina
dc.contributor.authorAndriyana, Andri
dc.contributor.authorBingol, Sedat
dc.contributor.authorWong, Yew Hoong
dc.date.accessioned2024-04-24T17:12:04Z
dc.date.available2024-04-24T17:12:04Z
dc.date.issued2022
dc.departmentDicle Üniversitesien_US
dc.description.abstractA comprehensive review of the features of silicon carbide (SiC) and various methods of deposition of gate oxides are presented in this report. The SiC material, which is mostly employed as base component in metal oxide semiconductor field effect transistors (MOSFETs) is very promising; for its high voltage, high power, high temperature and high breakdown field properties. These features have made it very attractive for use in power electronic devices over its counterparts in the field. Despite these great features, and the significant progress recorded in the past few years regarding the quality of the material, there are still some issues relating to optimization of the surface and interface processing. This review discusses the effect of surface modification and treatment as a means of enhancing the electrical performance of the SiC-based MOSFETs. It also identifies the challenges of controlling the density of dielectric/SiC interface trap that is needed to improve the values of mobility channels, and several oxidation techniques that could be used to surmount the structural limitations presently encountered by the SiO2/SiC system. Reliability as a significant aspect of electronic structures was also discussed with much emphasis on causes of their breakdown and possible solutions, especially in high thermal applications.en_US
dc.description.sponsorshipMinistry of Higher Education (MOHE), Malaysia via Fundamental Research Grant Scheme [FP049-2020]; Universiti Malaya via Impact-oriented Interdisciplinary Research Grant Programme [IIRG018B-2019]; Southeast Asia-Taiwan Universities (SATU) Joint Research Scheme [ST016-2020]en_US
dc.description.sponsorshipThis work is financially supported by the Ministry of Higher Education (MOHE), Malaysia via Fundamental Research Grant Scheme (FP049-2020) and Universiti Malaya via Impact-oriented Interdisciplinary Research Grant Programme (IIRG018B-2019) and Southeast Asia-Taiwan Universities (SATU) Joint Research Scheme (ST016-2020).en_US
dc.identifier.doi10.1149/2162-8777/ac84ff
dc.identifier.issn2162-8769
dc.identifier.issn2162-8777
dc.identifier.issue8en_US
dc.identifier.scopus2-s2.0-85135635581
dc.identifier.scopusqualityQ2
dc.identifier.urihttps://doi.org/10.1149/2162-8777/ac84ff
dc.identifier.urihttps://hdl.handle.net/11468/17839
dc.identifier.volume11en_US
dc.identifier.wosWOS:000836439500001
dc.identifier.wosqualityQ3
dc.indekslendigikaynakWeb of Science
dc.indekslendigikaynakScopus
dc.language.isoenen_US
dc.publisherElectrochemical Soc Incen_US
dc.relation.ispartofEcs Journal of Solid State Science and Technology
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanıen_US
dc.rightsinfo:eu-repo/semantics/closedAccessen_US
dc.subject[No Keyword]en_US
dc.titleReview-Gate Oxide Thin Films Based on Silicon Carbideen_US
dc.titleReview-Gate Oxide Thin Films Based on Silicon Carbide
dc.typeReview Articleen_US

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