Modification of electrical and optical properties of CuO thin films by Ni doping

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dc.contributor.authorBaturay, Silan
dc.contributor.authorTombak, Ahmet
dc.contributor.authorKaya, Derya
dc.contributor.authorOcak, Yusuf Selim
dc.contributor.authorTokus, Murat
dc.contributor.authorAydemir, Murat
dc.contributor.authorKilicoglu, Tahsin
dc.date.accessioned2024-04-24T16:02:16Z
dc.date.available2024-04-24T16:02:16Z
dc.date.issued2016
dc.departmentDicle Üniversitesien_US
dc.description.abstractUndoped and Ni-doped CuO thin films were deposited onto glass substrates using a spin-coating technique at different doping concentrations (undoped, 2, 4, 6, and 10 %). X-ray diffraction patterns for undoped and Ni-doped CuO thin films indicated that the films were polycrystalline, with preferential growth in the (002), (111), and (-311) directions. Atomic force microscopy images revealed that the surface morphologies of the films were not uniform. Scanning electron microscopy images confirmed the presence of agglomerated particles on the surfaces; the coverage increased with the doping level. A Hall effect system with a van der Pauw configuration was used to investigate the electrical properties of the CuO films. The free charge carrier concentration decreased and hole mobility increased with increasing Ni concentration, with the exception of the 10 % Ni-doped CuO sample. Ultraviolet-visible spectroscopy measurements of the film samples indicated an average transmittance of 30-40 % in the visible range. The optical band gap decreased slightly for low-level doping and increased from 2.03 to 2.22 eV for 10 % Ni incorporation. The electrical and optical properties of the CuO films were modified by Ni doping, i.e. the band gap decreased and the mobility increased almost linearly, with the exception of the 10 % Ni-doped sample. SEM images of a undoped b 2 % c 4 % d 6 %, and e 10 % Ni-doped CuO thin films. [GRAPHICS]en_US
dc.identifier.doi10.1007/s10971-015-3953-4
dc.identifier.endpage429en_US
dc.identifier.issn0928-0707
dc.identifier.issn1573-4846
dc.identifier.issue2en_US
dc.identifier.scopus2-s2.0-84954550787en_US
dc.identifier.scopusqualityQ2en_US
dc.identifier.startpage422en_US
dc.identifier.urihttps://doi.org/10.1007/s10971-015-3953-4
dc.identifier.urihttps://hdl.handle.net/11468/14722
dc.identifier.volume78en_US
dc.identifier.wosWOS:000372875200023
dc.identifier.wosqualityQ1
dc.indekslendigikaynakWeb of Science
dc.indekslendigikaynakScopus
dc.language.isoenen_US
dc.publisherSpringeren_US
dc.relation.ispartofJournal of Sol-Gel Science and Technologyen_US
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanıen_US
dc.rightsinfo:eu-repo/semantics/closedAccessen_US
dc.subjectBand Gapen_US
dc.subjectCuoen_US
dc.subjectMetal Oxidesen_US
dc.subjectMobilityen_US
dc.subjectNickel Dopingen_US
dc.subjectOptical Propertiesen_US
dc.titleModification of electrical and optical properties of CuO thin films by Ni dopingen_US
dc.typeArticleen_US

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